{"title":"超薄InGaAsP层的LPE生长","authors":"B. Bo, B. Zhu, Baoshun Zhang, Xingde Zhang","doi":"10.1117/12.300722","DOIUrl":null,"url":null,"abstract":"The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"81 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"LPE growth of ultrathin InGaAsP layer\",\"authors\":\"B. Bo, B. Zhu, Baoshun Zhang, Xingde Zhang\",\"doi\":\"10.1117/12.300722\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.\",\"PeriodicalId\":362287,\"journal\":{\"name\":\"Thin Film Physics and Applications\",\"volume\":\"81 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.300722\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.300722","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The LPE growth characteristics of ultra-thin quaternary InGaAsP alloy on GaAs substrate with different sliding speeds and various graphite growth cells has been described. The properties of grown layer are charactered by SEM, photoluminescence spectrum and x-ray diffractometer. Ten to fifty nm InGaAsP layer can be easily obtained and the FWHM of PL spectrum is about 14 mev at 10 K.
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