Electromigration performance improvement of Al-Si-Cu/TiN/Ti/n+Si contact

Abstract

In this study, two different processes, with and without rapid thermal annealing (RTA), have been compared for the Al-Si- Cu/TiN/Ti multilayer contact on n+ diffusions. A series of wafer level reliability (WLR) measurement performed on a test structure with two 1.08 X 1.08 micrometer2 contacts on n+ diffusion. The results show that RTA can increase contact electromigration (EM) lifetime dramatically. The XRD, AES and TEM analysis indicate that this improvement is attributed to oxygen stuffing in TiN, phase change of TiN and TiSi2 formation at the interface of Ti and Si.