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Thin Film Physics and Applications最新文献

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Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors 半导体近表面和表面量子阱结构的光谱研究
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300637
S. Shen, Xiaoshuang Chen, Wayne W. Lu, M. Wan, Xingquan Liu
{"title":"Spectroscopic investigation of near-surface and surface quantum well structures of semiconductors","authors":"S. Shen, Xiaoshuang Chen, Wayne W. Lu, M. Wan, Xingquan Liu","doi":"10.1117/12.300637","DOIUrl":"https://doi.org/10.1117/12.300637","url":null,"abstract":"A comprehensive and spectroscopic investigation, including absorption (AB), photoluminescence (PL) and photoreflectance (PR) experiments on the electronic states and their optical transitions in some near-surface and surface quantum well structures of semiconductors are performed and reported here in this paper. The strain relaxation as a function of capping layer, the electronic states on the surface quantum well and the dependence of transition related surface Si (delta) doping on doping concentration.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131924349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
TiO2-doped MoO3 electrochromic thin films via sol-gel method 溶胶-凝胶法制备tio2掺杂MoO3电致变色薄膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300679
Zhongchun Wang, Xiaofeng Chen, Xingfang Hu
{"title":"TiO2-doped MoO3 electrochromic thin films via sol-gel method","authors":"Zhongchun Wang, Xiaofeng Chen, Xingfang Hu","doi":"10.1117/12.300679","DOIUrl":"https://doi.org/10.1117/12.300679","url":null,"abstract":"MoO3 films allow high intercalation rate, but deintercalation is difficult to perform. It is the reason the MoO3 film has lower response time for use as electrochromic display materials. The effect of additive on the electrochromic property of MoO3 thin films produced by sol-gel method has been studied. The pure and TiO2-doped MoO3 thin films were characterized optically and electrochemically in LiClO4-propylene carbonate solutions. The experimental results showed that the additive of TiO2 had improved remarkably the cyclic stability and reversibility of the MoO3 film electrochromic electrode.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"190 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134516665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoreflectance spectroscopy of Si surface delta doping on GaAs (001) 砷化镓上Si表面δ掺杂的光反射光谱(001)
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300663
M. Wan, Xingquan Liu, Xiaoshuang Chen, W. Lu, S. Shen
{"title":"Photoreflectance spectroscopy of Si surface delta doping on GaAs (001)","authors":"M. Wan, Xingquan Liu, Xiaoshuang Chen, W. Lu, S. Shen","doi":"10.1117/12.300663","DOIUrl":"https://doi.org/10.1117/12.300663","url":null,"abstract":"Photoreflectance (PR) spectroscopy system is combined with molecular beam epitaxy (MBE) to accomplish in-situ PR measuring of the Si surface (delta) doping on GaAs (001) with different concentrations at different temperatures. The features observed on the high-energy side of the fundamental gap are attributed to transitions involving electronic subbands in the half V-shaped potential well. We find that the Si (delta) -doping-related spectral structure first shifts to high energy side with the doping concentration increasing, then almost stop shifting with the doping concentration higher than 2.4 X 1014 cm-2 when temperature increases, at certain doping concentration the Si (delta) - doping-related transition shifts toward low energy side. The dependence of the transition on doping concentration is well explained by using a simple theoretical model.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132928733","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intelligent sensors for the next century 下个世纪的智能传感器
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300640
Yong-ling Wang
{"title":"Intelligent sensors for the next century","authors":"Yong-ling Wang","doi":"10.1117/12.300640","DOIUrl":"https://doi.org/10.1117/12.300640","url":null,"abstract":"Functional ceramics have become a news stage with the concept that different kinds of materials, no matter they are organic or inorganic with different functional effects, can be composed together to find a new material by multilayer thin film technologies. In this paper the design of new creative sensors, devices and system is proposed, which is based on: (1) Variation of spontaneous polarization Ps which can be induced or attended to maximum change during phase transformation; (2) Functional thin film materials which can be induced phase transitions by applied stress, temperature or electric field and these exhibit extraordinary piezoelectric, pyroelectric, electrostrictive, electro-optic, etc. and field effect properties in comparison with bulk materials so far existed; (3) Composite of these effects through thin film integrated technology to design new intelligent sensors; (4) Connecting equivalent circuits of functional elements, devices and electronic circuits to design new intelligent systems. As an example, a pyroelectric voltage transformer was introduced. The principle demonstration and experimental results are discussed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133132084","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preparation and properties of Ti(OC4H9)4-GPTMS-MMA derived titania-silica sol-gel optical coatings Ti(OC4H9)4-GPTMS-MMA衍生二氧化钛溶胶-凝胶光学涂层的制备与性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300680
Qinyuan Zhang, Zhong-hong Jiang, Yung-Yuan Wu, Lili Hu
{"title":"Preparation and properties of Ti(OC4H9)4-GPTMS-MMA derived titania-silica sol-gel optical coatings","authors":"Qinyuan Zhang, Zhong-hong Jiang, Yung-Yuan Wu, Lili Hu","doi":"10.1117/12.300680","DOIUrl":"https://doi.org/10.1117/12.300680","url":null,"abstract":"Sol-gel processing of acid-catalyzed tetrabutoxytitanate, 3- glycidyl propyl trimethoxisilane and monomeric methyl methacrylate to produce titania-silica sol-gel optical coatings and matrix materials has been systematically studied. The coatings were deposited by dip-coating technique on glass substrates from a polymeric solutions, pseudo-ternary phase diagram were used to outline the regions of stability of the Ti(OC4H9)4-C2H5OH-H2O-HAC and Ti(OC4H9)4-GPTMS-C2H5OH-H2O-HAC system respectively. It was found that the stability of the system depend on the compositions, especially the molar ratio of [H2O]/[Ti(OC4H9)4]. The use of GPTMS allows a thicker coatings than is possible with the sol- gel films prepared from non-organically modified alkoxides.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132867924","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Recent progress of multilayer ceramic capacitors 多层陶瓷电容器的研究进展
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300683
T. Nomura
{"title":"Recent progress of multilayer ceramic capacitors","authors":"T. Nomura","doi":"10.1117/12.300683","DOIUrl":"https://doi.org/10.1117/12.300683","url":null,"abstract":"Recently, reduction of production costs with maintaining high reliability is required for wider applications of capacitors. Ni-electrode multilayer ceramic capacitors (MLCCs) of BaTiO3-based dielectrics and AgPd-electrode MLCCs of relaxor materials were developed to meet the requirements. Thinner dielectriclayers, miniaturization, and high capacitance are also major requirements for MLCCs. In these circumstances, much effort has been paid in order to achieve higher reliability. Ni-electrode MLCCs are promising way to satisfy the requirements of high capacitance, low cost, and high reliability. Major problems about the reliability were mechanical fracture, degradation of insulation resistance, and capacitance aging. These phenomena are strongly affected by both chemical composition and producing process.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"279 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130925487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Analysis of the thickness measurement of multilayer optical thin films with grazing incident x-ray 用掠入射x射线测量多层光学薄膜厚度的分析
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300731
Xueqian Li, Xiaowei Song, Y. Qu, Mei Li, Xingde Zhang
{"title":"Analysis of the thickness measurement of multilayer optical thin films with grazing incident x-ray","authors":"Xueqian Li, Xiaowei Song, Y. Qu, Mei Li, Xingde Zhang","doi":"10.1117/12.300731","DOIUrl":"https://doi.org/10.1117/12.300731","url":null,"abstract":"The measuring conditions of the thickness of thin films with grazing incident x-ray is explained, and interferential principle and method to measure the thickness of thin films by grazing incident x-ray are discussed and analyzed in the paper. The periodic thickness of the multilayer optical thin films is measured with double-crystal diffractometer at a very small grazing incident angle, the result is satisfactory and measured values is in good agreement with designed values.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115344500","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Deposition of YBCO thin film with buffer layer by unbalanced magnetron sputtering 非平衡磁控溅射沉积带缓冲层的YBCO薄膜
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300667
Chunaeni Latief, M. Barmawi
{"title":"Deposition of YBCO thin film with buffer layer by unbalanced magnetron sputtering","authors":"Chunaeni Latief, M. Barmawi","doi":"10.1117/12.300667","DOIUrl":"https://doi.org/10.1117/12.300667","url":null,"abstract":"YBCO thin film with strontium titanate buffer layer has been made by using unbalanced magnetron sputtering (UMS). It has been shown experimentally that resputtering effect, usually takes place in balanced magnetron sputtering and glow discharge sputtering is suppressed. It turns out that the critical temperature as well as the critical current is improved.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121205910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Deposition and properties of PLD grown RuO2 thin film PLD生长的RuO2薄膜的沉积与性能
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300697
X. Fang, M. Tachiki, Takeshi Kobayashi
{"title":"Deposition and properties of PLD grown RuO2 thin film","authors":"X. Fang, M. Tachiki, Takeshi Kobayashi","doi":"10.1117/12.300697","DOIUrl":"https://doi.org/10.1117/12.300697","url":null,"abstract":"RuO2 thin films have been grown by the pulsed laser deposition (PLD) method. It was shown that the RuO2 thin film were (110) oriented and in-plane ordered (epitaxially grown). The electrical and optical properties of the RuO2 thin film have been measured. When grown at 700 degrees Celsius, the films exhibited resistivities as low as 39 (mu) (Omega) (DOT) cm at room temperature. The real and imaginary parts of the dielectric constant and complex refractive index for RuO2 thin films were estimated in the photon energy range from 1.5 to 4.5 eV by spectroscopic ellipsometry measurements. A transition from the valence band to the conduction band was observed for RuO2 thin films near 2.7 eV and the dependence of the refractive index on the deposition temperature was also observed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116841170","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Optical absorption in tin selenide thin films 硒化锡薄膜的光学吸收
Thin Film Physics and Applications Pub Date : 1998-02-20 DOI: 10.1117/12.300689
Y. Wahab, S. D. Hutagalung, S. Sakrani
{"title":"Optical absorption in tin selenide thin films","authors":"Y. Wahab, S. D. Hutagalung, S. Sakrani","doi":"10.1117/12.300689","DOIUrl":"https://doi.org/10.1117/12.300689","url":null,"abstract":"Tin selenide (SnSe) thin films have been prepared by encapsulated selenization technique. The Sn/Se stacked films were deposited by vacuum evaporation and annealed at 200 degrees Celsius for 3 hours to form a stoichiometric SnSe compound. Optical absorption measurements were made on the as- prepared sample using spectrophotometer in the range from UV to visible region (200 - 900 nm). The absorption coefficient, (alpha) was found to be greater than 105 cm-1 that suggested the occurrence of either indirect allowed or direct forbidden optical transition. A further investigations on the (ahv)1/2 and (ahv)2/3 plots against photon energy have been carried out and the resulting optical bandgap obtained from indirect allowed transitions were 0.95 eV for 40.5 nm sample and reduced to 0.79 eV for 125 nm sample thickness. In the case of direct forbidden transition, the energy gaps were between 1.20 - 1.08 nm. The results also showed that the band gap decreased with increasing sample thickness.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131050670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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