Deposition and properties of PLD grown RuO2 thin film

Abstract

RuO2 thin films have been grown by the pulsed laser deposition (PLD) method. It was shown that the RuO2 thin film were (110) oriented and in-plane ordered (epitaxially grown). The electrical and optical properties of the RuO2 thin film have been measured. When grown at 700 degrees Celsius, the films exhibited resistivities as low as 39 (mu) (Omega) (DOT) cm at room temperature. The real and imaginary parts of the dielectric constant and complex refractive index for RuO2 thin films were estimated in the photon energy range from 1.5 to 4.5 eV by spectroscopic ellipsometry measurements. A transition from the valence band to the conduction band was observed for RuO2 thin films near 2.7 eV and the dependence of the refractive index on the deposition temperature was also observed.