Thin Film Physics and Applications最新文献

{"title":"Influence of H2O on structure of base-catalyzed porous SiO2 antireflective coatings","authors":"Xiaolin Liu, Weiqing Zhang, Yueqin Le, Yongxing Tang, Jinren Sun, P. Liang","doi":"10.1117/12.300638","DOIUrl":"https://doi.org/10.1117/12.300638","url":null,"abstract":"Silica antireflective coatings were deposited on KB-7 glass substrates by sol-gel method. The sols were produced via ammonia catalysis tetraethylorthosilicate (TEOS) diluted in ethanol, using different molar ratio, R, of H2O/TEOS. The influence of amount of water on structure of coatings was investigated by measuring thickness, refractive index, and infrared spectrum of the coatings and BET surface area of the dried gel silica power. The results revealed that the thickness and the refractive index were decreased with the increase of R, whereas the surface area was increased with the increase of R. The infrared spectra indicated that the densification of coating reduced with increase of R.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115995293","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Thin film technologies for optoelectronic components in fiber optic communication","authors":"A. Perinati","doi":"10.1117/12.300670","DOIUrl":"https://doi.org/10.1117/12.300670","url":null,"abstract":"'The Asian Routes Towards the Global Information Society' and 'Towards a Strategic Planning for the Global Information Society' will be the forum themes of 'Asia Telecom 97' and 'Telecom Interactice 97' events respectively, to be held by the International Telecommunication Union (ITU) in order to further telecommunication development around the world. International telecommunications network affects our life by keeping us in touch, bringing us world news and underpinning the global economy. Global tele-economy, global information infrastructure, global information society terms are more and more used to indicate the evolution towards an information- driven world where the access to information, communication and technologies is essential to the economic and social development in every country. Telecommunication industry can strongly contribute to this evolution together with broadcasting and computer industry, and fiber optic communications are expected to continue to grow up and share a relevant part of the total telecom market. In 1995 telecom market shown a 3.8 percent worldwide investment growth reaching a $545 billion value. According to 'Kessler Marketing Intelligence (KMI) Corp.' analysis of fiberoptics and multimedia market the amount of cabled fiber installed in U.S. will be around 11 million fiber-km in 1997 and 15 million fiber-km are predicted in the year 2000. Between 1995 and 1998 the undersea industry is estimated to deal with $13.9 billion as additional undersea cable systems investment in the global telecom network. In China beside satellite telecom stations and digital microwave systems 22 fiber optic backbones have been realized and another 23 systems are expected to be built in the Ninth Five-Year National Plan (1996 to approximately 2000) with a total length of nearly 30,000 sheat-km. The study, Fiber and Fiberoptic Cable Markets in China, recently released by KMI Corp. shows that fiber optic cable installation by MPT and other network operators will grow at an annual average rate of 22 percent from 1.3 million fiber-km in 1995 to 3.5 million fiber-km in 2000. The worldwide components market-cable, transceivers and connectors -- $6.1 billion in 1994, is forecasted to grow and show a 19 percent combined annual growth rate through the year 2000 when is predicted to reach $17.38 billion. Fiber-in-the-loop and widespread use of switched digital services will dominate this scenario being the fiber the best medium for transmitting multimedia services. As long as communication will partially replace transportation, multimedia services will push forward technology for systems and related components not only for higher performances but for lower cost too in order to get the consumers wanting to buy the new services. In the long distance transmission area (trunk network) higher integration of electronic and optoelectronic functions are required for transmitter and receiver in order to allow for higher system speed, moving from 2.5 Gb/s","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117283524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"MBE technology and semiconductor laser material growth","authors":"Guo-Jun Liu, Qianyong Zhang, Han Yang, Xingde Zhang, Xueqian Li, Y. Qu, Xiaowei Song, Xiao-hua Wang","doi":"10.1117/12.300715","DOIUrl":"https://doi.org/10.1117/12.300715","url":null,"abstract":"This paper summarizes the technical characteristics and performance of our newly purchased VG V80H MBE system. Our research work on thin film semiconductor laser materials growth on this system has also been presented here, with some discussion on beam flux stability and growth uniformity et al.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123557002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Room-temperature visible photoluminescence from C clusters embedded in thin SiO2 films","authors":"Yinyue Wang, Yinhu Yang, Yongping Guo, R. Gan, Jizheng Wang, Yanjie Sun, Guanghua Chen","doi":"10.1117/12.300647","DOIUrl":"https://doi.org/10.1117/12.300647","url":null,"abstract":"The composite films of c and SiO2 were fabricated by an rf co-sputtering technique and post-annealing treatment, strong PL spectra with a peak energy about 2.22 eV was obtained at room temperature. We investigated the PL spectra dependence on substrate temperature annealing temperature, and sample thickness. Using Raman scattering, IR transmission and XRD measurements, we studied the structures of the composite films. Some results were discussed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"52-54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123644392","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Optical nonlinearities of poly(p-phenylene vinylene) (PPV) thin film waveguide","authors":"Jie Zheng, Shaojie Ma, Mai Xu, Sumei Wang, Zonghao Huang, D. Xie, Rongshun Wang","doi":"10.1117/12.300650","DOIUrl":"https://doi.org/10.1117/12.300650","url":null,"abstract":"The nonlinear-optical properties of poly (p-phenylene- vinylene) (PPV) were studied. The sign and size of the real and imaginary part of (chi) (3) have been measured at 532 nm to be -5.168 multiplied by 10-9 esu and -1.952 multiplied by 10-9 esu, respectively by the Z-scan method. The nonlinear refractive index n2 is of -4.271 multiplied by 10-9 esu, and all-optical switching in the PPV thin-film waveguide was observed by prism coupling.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125083073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method","authors":"Biao Li, Y. Gui, J. Zhu, J. Chu","doi":"10.1117/12.300702","DOIUrl":"https://doi.org/10.1117/12.300702","url":null,"abstract":"Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123589878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Preparation of TiO2 nanoparticle thin film with sol-gel process","authors":"Jun Shen, Z. Weng, Yulong Zhang, Z. Deng, Tianhe Yang, Jue Wang, Lingyan Chen","doi":"10.1117/12.300677","DOIUrl":"https://doi.org/10.1117/12.300677","url":null,"abstract":"TiO2 nanoparticle thin films are fabricated via sol-gel process followed by dip and spin coating technique, using Ti(OC4H9)4 as raw material. A complexing agent is used in order to form a stable sol. Experiments show that the colloidal particles in the sols are relatively large under basic catalyst conditions, while under acidic conditions, the colloidal particles are only about several nanometers. The properties and structures of the films are studied. The films are normally homogenous and crack-free. TEM shows that the films are composed of nanoparticles with a certain porosity. Under the thermal treatment of 80 degrees Celsius, the porosity and thickness of the film decrease while the refractive index increases from the original 1.70 to the final 1.89. When the temperature of the thermal treatment goes up, the size of the nanoparticles increases and crystallization occurs.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120956327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Effect of buffer layer on the growth of GaN films on sapphire","authors":"Ke Xu, Rongsheng Qiu, J. Xu, Z. Fang, P. Deng, Xiaoshan Wu, Mu Wang, N. Ming","doi":"10.1117/12.300713","DOIUrl":"https://doi.org/10.1117/12.300713","url":null,"abstract":"The influence of buffer layer on the growth of GaN epilayer was investigated. Five matching orientations were identified when GaN was directly grown on the sapphire (0001) plane. The use of low-temperature buffer layer significantly improved the epitaxial film quality and the surface morphology. The optimal thickness of buffer layer was about 18 nm - 20 nm in the present growth condition.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"26 18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126273010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Surface treatment effects on Si(111) and (100) surface structures and Si/SiO2 interface state","authors":"H. Yamamoto, K. Okumura, T. Kanashima, M. Okuyama","doi":"10.1117/12.300658","DOIUrl":"https://doi.org/10.1117/12.300658","url":null,"abstract":"Surface treatment effects on microscopic morphology of Si(111) and (100) surfaces have been investigated by atomic force microscope (AFM). Well-ordered atomic steps and flat terraces have been clearly observed on the Si(111) surfaces treated in 40% NH4F solution. Then, SiO2 films were deposited on these atomically flat substrates at 300 degrees Celsius by photo-CVD method. Interface state density of the Si/SiO2 structure with this flat surface is smaller than that of the substrate with disordered surface. On the other hand, in the case of Si(100) wafers, atomically flat structures have not been observed in the surfaces treated by 1% HF, 40% BHF, and HF/H2O2 solutions, and a lot of small and random unevennesses have been observed on each surface. Si/SiO2 interface state density decreases with decreasing average roughness of Si surface.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"54 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130680744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"New route for sol-gel high-refractive-index ZrO2 coating","authors":"Yongxing Tang, Congshan Zhu, Weiqing Zhang, Zhong-hong Jiang","doi":"10.1117/12.300727","DOIUrl":"https://doi.org/10.1117/12.300727","url":null,"abstract":"A new sol-gel route for zirconia coating is now reported. Zirconia coatings consisting of zirconia particles were prepared from inorganic precursor (ZrOCl28H2O) by a simple alcothermal process instead of the complicated hydrothermal method published by others. The coatings were applied by dip method. The zirconia coating structures and optical properties were investigated. The dependencies of coating thickness and refractive index on heat temperature were studied. It is noted that the abrasion resistance of coating is rapidly increased as cured temperature. The laser induced damage thresholds of zirconia coatings were range of 4 - 5 J/cm2, for 1 ns pulse width and 1064 nm wavelength. The relevant chemistry is discussed.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}