嵌入SiO2薄膜中的C簇室温可见光致发光

Thin Film Physics and Applications Pub Date : 1998-02-20 DOI:10.1117/12.300647

Yinyue Wang, Yinhu Yang, Yongping Guo, R. Gan, Jizheng Wang, Yanjie Sun, Guanghua Chen

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引用次数: 0

摘要

采用射频共溅射技术制备了c和SiO2的复合薄膜，并进行了退火处理，在室温下获得了峰值能量约为2.22 eV的强PL光谱。我们研究了PL光谱与衬底温度、退火温度和样品厚度的关系。利用拉曼散射、红外透射和x射线衍射测试对复合膜的结构进行了研究。讨论了一些结果。

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Room-temperature visible photoluminescence from C clusters embedded in thin SiO2 films

The composite films of c and SiO2 were fabricated by an rf co-sputtering technique and post-annealing treatment, strong PL spectra with a peak energy about 2.22 eV was obtained at room temperature. We investigated the PL spectra dependence on substrate temperature annealing temperature, and sample thickness. Using Raman scattering, IR transmission and XRD measurements, we studied the structures of the composite films. Some results were discussed.

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Thin Film Physics and Applications

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