{"title":"用改性熔蚀液相外延法生长高质量的Hg1-xCdxTe薄膜","authors":"Biao Li, Y. Gui, J. Zhu, J. Chu","doi":"10.1117/12.300702","DOIUrl":null,"url":null,"abstract":"Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.","PeriodicalId":362287,"journal":{"name":"Thin Film Physics and Applications","volume":"51 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method\",\"authors\":\"Biao Li, Y. Gui, J. Zhu, J. Chu\",\"doi\":\"10.1117/12.300702\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.\",\"PeriodicalId\":362287,\"journal\":{\"name\":\"Thin Film Physics and Applications\",\"volume\":\"51 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-02-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Thin Film Physics and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.300702\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Thin Film Physics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.300702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Quality Hg1-xCdxTe films grown by the modified melt-etch liquid phase epitaxy method
Hg1-xCdxTe films were grown by a modified meltetch liquid phase epitaxial (LPE) technique which includes both substrate and epilayer etchback steps. The crystal quality of epilayer has been investigated by means of transmission electron microscope (TEM), scanning electron microscope (SEM), and double crystal x-ray rock curve (XRD). It has been found that adequate meltetch of the substrate at the beginning of LPE provides a fresh and flat surface for epitaxial growth, while epilayer meltetch at the end of LPE may prevent spurious and melt sticking.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
