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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs GaN hemt中AM/PM非线性与源场板的关系
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392962
S. Khandelwal, P. Hammes, M. Schmidt-Szalowski, A. Dikshit, Menno Clerk
{"title":"Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs","authors":"S. Khandelwal, P. Hammes, M. Schmidt-Szalowski, A. Dikshit, Menno Clerk","doi":"10.1109/BCICTS48439.2020.9392962","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392962","url":null,"abstract":"AM/PM non-linearity of GaN HEMTs is analyzed with the help of physics-based industry standard ASM-HEMT model. A commercial GaN HEMT device is modeled with ASM-HEMT model. Accurate large signal non-linear model is obtained. Next this calibrated model is used to analyze the AM/PM non-linearity. It is found that the non-linear source field-plate capacitance in GaN HEMTs has a large impact on its AM/PM behavior. This is due to the large drain-source Vds voltage swing at high output powers. Large Vds swings from few volts to above 100 V modulates the charge in source field-plate region. This causes capacitance due to the source field-plate to be highly nonlinear” in-turn affecting the AM/PM behavior of the device.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"57 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124658804","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider 用于可编程分频器的带感应峰值的117ghz双模预分频器
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392936
L. Polzin, M. V. Delden, N. Pohl, K. Aufinger, T. Musch
{"title":"A 117 GHz Dual-Modulus Prescaler With Inductive Peaking for a Programmable Frequency Divider","authors":"L. Polzin, M. V. Delden, N. Pohl, K. Aufinger, T. Musch","doi":"10.1109/BCICTS48439.2020.9392936","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392936","url":null,"abstract":"In this contribution, a 4/5 dual-modulus prescaler operating from DC to 117 GHz is presented. The prescaler is key to a fully programmable dual-modulus frequency divider. Thus, it is essential for fractional phase-locked loops in highperformance mmWave and THz measurement systems. Inductive peaking provides additional speed enhancement of the prescaler. Two different inductor realizations for inductive peaking are presented. Even for high temperatures up to 70°C the prescaler works up to 111 GHz. The prescaler requires only 28.1 mA from a 3.3 V power supply. It is implemented in Infineon's 90 nm SiGe BiCMOS technology B12HFC.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127972625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOS 采用45纳米SOI CMOS的20-33 GHz直接转换发射机
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392967
Tiantong Ren, S. Hari, B. Floyd
{"title":"A 20-33 GHz Direct-Conversion Transmitter in 45-nm SOI CMOS","authors":"Tiantong Ren, S. Hari, B. Floyd","doi":"10.1109/BCICTS48439.2020.9392967","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392967","url":null,"abstract":"This paper presents a 20–33 GHz direct-conversion transmitter implemented in 45-nm RFSOI CMOS technology. The transmitter features a divider-based quadrature clock generation circuit, two current-combined double-balanced mixers, and a balanced power amplifier (PA) employing stacked FETs. The transmitter chip achieves 19.1 to 22.4 dB of conversion gain with saturated output power of 16.7 to 20.4 dBm over 20 to 33 GHz at the differential output. Image rejection and carrier suppression are more than 29 dB and 36 dB after calibration. At a carrier frequency of 28 GHz, the transmitter chip achieves an error vector magnitude (EVM) of 5.1 % with 12 Gbps using 64-QAM.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"139-140 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121288331","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
SiGe Microwave Phototransistors for Microwave-Photonics Applications 微波光子学应用的SiGe微波光电晶体管
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392985
Z. Tegegne, M. Rosales, Francesco Peressutti, J. Laheurte, C. Algani, J. Nanni, G. Tartarini, C. Viana, J. Polleux
{"title":"SiGe Microwave Phototransistors for Microwave-Photonics Applications","authors":"Z. Tegegne, M. Rosales, Francesco Peressutti, J. Laheurte, C. Algani, J. Nanni, G. Tartarini, C. Viana, J. Polleux","doi":"10.1109/BCICTS48439.2020.9392985","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392985","url":null,"abstract":"This paper gives an overview on the development of microwave phototransistors within SiGe Bipolar and BiCMOS technologies. The physics and design of SiGe/Si Heterojunction Bipolar Phototransistors (HPT) are covered. A comprehensive analysis of the photodetection mechanisms and its localization into the structure is provided. After a description of the scaling rules, applications are presented in the field of Microwave-Photonics for short range and low-cost applications. Perspectives are then highlighted that includes the frequency increase, the enlargement of functionality and even on-chip optical links.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125336958","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analog/Mixed-Signal Integrated Circuits for Quantum Computing 量子计算模拟/混合信号集成电路
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392973
J. Bardin
{"title":"Analog/Mixed-Signal Integrated Circuits for Quantum Computing","authors":"J. Bardin","doi":"10.1109/BCICTS48439.2020.9392973","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392973","url":null,"abstract":"Future error-corrected quantum computers will require analog/mixed-signal control systems capable of providing a million or more high-precision analog waveforms. In this article, we begin by introducing the reader to superconducting transmon qubit technology and then explain how the state of a quantum processor implemented in this technology is controlled. By example, we then show how one can implement one part of the quantum control system as a cryogenic integrated circuit and review experimental results from the characterization of such an IC. The article concludes with a discussion of analog/mixed-signal design challenges that must be overcome in order to build the system required to control a million-qubit quantum computer.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131425150","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 28–37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers 用于低功率宽带相控阵接收机的28-37 GHz三级变压器耦合SiGe LNA，最小NF为2.5 dB
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392929
Abdulrahman A. Alhamed, G. Rebeiz
{"title":"A 28–37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers","authors":"Abdulrahman A. Alhamed, G. Rebeiz","doi":"10.1109/BCICTS48439.2020.9392929","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392929","url":null,"abstract":"This work presents a transformer-based three-stage SiGe low-noise amplifier (LNA) implemented in the Tower Semiconductor SBC18S5 process. The design realizes wideband input matching using a T-coil network, and wideband interstage matching using coupled transformers. The LNA exhibits 20 dB gain with a 3-dB bandwidth > 9 GHz and has a minimum noise figure (NF) of 2.5 dB with 13 mW of power consumption. The LNA can also operate at 6 mW power consumption with only a 0.3 dB increase in the NF, and achieves 3 dB of gain for 1 mW of DC power consumption at 33 GHz. To the author's knowledge, this work presents one of the highest figure-of-merit (FoM) of mm-wave amplifiers with a center frequency above 30 GHz.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133455482","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency Resolution 一个完全集成的20-500 ghz相干检测器，2赫兹频率分辨率
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392950
M. Hosseini, A. Babakhani
{"title":"A Fully Integrated 20-500-GHz Coherent Detector with 2-Hz Frequency Resolution","authors":"M. Hosseini, A. Babakhani","doi":"10.1109/BCICTS48439.2020.9392950","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392950","url":null,"abstract":"This paper presents an oscillator-free frequency comb-based coherent detector with an on-chip antenna for sensing and imaging applications in millimeter-wave and terahertz frequencies. This design detects arbitrary signals from 20 GHz up to 500 GHz with 2-Hz frequency resolution. A peak sensitivity of −100 dBm is measured with 1 KHz resolution bandwidth (RBW). The frequency spacing in the frequency comb is tunable and set to 4 GHz in this work. This frequency comb is used as an on-chip reference signal (LO frequency comb). This design also functions as a comb radiator. A chip-to-chip dual-frequency comb is successfully measured and characterized in the 20-220-GHz frequency range by using this chip as a transmitter and receiver. Compared with receivers presented in existing studies, this work has the widest bandwidth among coherent receivers.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114602594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Commercial Foundry Perspective of SiGe BiCMOS Process Technologies SiGe BiCMOS工艺技术的商业铸造前景
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392971
E. Preisler
{"title":"A Commercial Foundry Perspective of SiGe BiCMOS Process Technologies","authors":"E. Preisler","doi":"10.1109/BCICTS48439.2020.9392971","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392971","url":null,"abstract":"For the past two decades SiGe BiCMOS process technologies have filled in several gaps in commercial semiconductor product requirements not satisfied by standard CMOS processes. While this roster of applications has evolved and shifted during this time, SiGe BiCMOS continues to prove itself as an attractive solution for both newly emerging circuit requirements and also as a cost-effective replacement for applications previously addressed by discrete III-V device technologies. In this paper the 21st century history of SiGe BiCMOS technology and applications will be discussed, followed by an overview of the current technology, markets and application spaces where SiGe BiCMOS plays a major role, and finally a discussion of future technology and application trends will be presented.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124127869","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Broadband Reconfigurable Transceivers in SiGe SiGe中的宽带可重构收发器
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392948
G. Flewelling
{"title":"Broadband Reconfigurable Transceivers in SiGe","authors":"G. Flewelling","doi":"10.1109/BCICTS48439.2020.9392948","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392948","url":null,"abstract":"The focus of this paper is on our work with Broadband Reconfigurable Transceivers, mostly using SiGe processes. In general, it is difficult to design a system that can meet all needs. In some system dynamic range is critical, over certain bandwidths and frequency ranges. In others, the dynamic range may be less important, but the instantaneous bandwidth is more important. N-Path filters can provide a flexible, SWAP friendly, approach to reconfigurability in transceivers. One such custom IC is the MATRICs™ Adaptive Transceiver. The MATRICs™ V4 Adaptive Transceiver is a DC-to-40 GHz general purpose reconfigurable array of RF circuits embedded in a flexible switch fabric. Fabricated in Tower Semiconductor SBC13S4B SiGe-on-SOI BiCMOS process, the MATRICs™ Adaptive Transceiver employs SiGe HBTs for high-linearity (> + 10dBm IIP3) amplification and low phase-noise frequency generation, SOI FETs for low-loss switching, and achieves high on-chip RF isolation (>80 dB at 16 GHz) due to the high-resistivity SOI substrate, differential signalling, and chip-scale flip-chip bump packaging.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115193446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
HICUM/L2: Extensions over the last decade HICUM/L2:过去十年的扩展
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392954
M. Schröter, A. Pawlak, A. Mukherjee, D. Céli, M. Krattenmacher
{"title":"HICUM/L2: Extensions over the last decade","authors":"M. Schröter, A. Pawlak, A. Mukherjee, D. Céli, M. Krattenmacher","doi":"10.1109/BCICTS48439.2020.9392954","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392954","url":null,"abstract":"A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detailed description in [1]. The rationales for the various extensions, their physical background and some of the code implementation peculiarities are discussed.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114257360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
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