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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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RF Performance of GaN-Based Graded-Channel HEMTs 基于氮化镓的分级通道hemt的射频性能
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392987
N. Venkatesan, J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, Erdum Arkun, I. Khalaf, D. Fanning, P. Fay
{"title":"RF Performance of GaN-Based Graded-Channel HEMTs","authors":"N. Venkatesan, J. Moon, J. Wong, B. Grabar, M. Antcliffe, Peter Chen, Erdum Arkun, I. Khalaf, D. Fanning, P. Fay","doi":"10.1109/BCICTS48439.2020.9392987","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392987","url":null,"abstract":"GaN-based HEMTs are attractive devices for RF, microwave, and millimeter-wave applications, with excellent power and noise figure performance having been demonstrated. Recently, graded-channel structures have been explored for their potential to improve linearity through channel engineering. However, due to the longitudinal optical (LO) phonon coupling in III-N structures, graded channel devices are also seen to exhibit improved carrier saturation velocity over a wider range of device bias conditions. In turn, this may enable RF performance improvements. We report the first study of bias dependence of millimeter-wave RF performance for graded-channel GaN-based HEMTs. In contrast to conventional abrupt AlGaN/GaN heterostructure HEMTs, the higher carrier velocity leads to high ft and fmax over a wide range of bias conditions. This has implications for the design of high-linearity and power-efficient amplifiers.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129748041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer GaN射频hemt中的电流崩溃和扭结效应:外延缓冲器的关键作用
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392966
M. Uren, M. Kuball
{"title":"Current collapse and kink effect in GaN RF HEMTs: the key role of the epitaxial buffer","authors":"M. Uren, M. Kuball","doi":"10.1109/BCICTS48439.2020.9392966","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392966","url":null,"abstract":"GaN RF HEMTs all require a semi-insulating GaN layer to confine the electrons in the channel, and this is frequently achieved by incorporating iron as a deep acceptor. However, smaller densities of unintentionally incorporated carbon can actually have a larger effect than the iron on the dynamic behavior. We report simulations which include not only conventional deep level statistics but also hopping conduction along threading dislocations allowing a convincing representation of the floating p-type region which results from carbon co-doping. A wide range of experimental observations relating to important parameters and effects can be explained quantitatively. These include dynamic RON, dispersion in pulse I-V, kink effect, electric field crowding at the drain terminal, and complex drain current transients. It is strongly recommended that the incorporated carbon is taken more seriously and should be measured and reported much more widely than is currently the case.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127001223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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