2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology 采用90nm t栅GaN HEMT技术的稳健5w可重构S/ x波段GaN LNA

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392933

K. Kobayashi, Vipan Kumar, C. Campbell, Shuoqi Chen, Yu Cao, J. Jimenez

{"title":"Robust-5W Reconfigurable S/X-band GaN LNA using a 90nm T-gate GaN HEMT Technology","authors":"K. Kobayashi, Vipan Kumar, C. Campbell, Shuoqi Chen, Yu Cao, J. Jimenez","doi":"10.1109/BCICTS48439.2020.9392933","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392933","url":null,"abstract":"This paper describes the design and measured performance of an S/X-band reconfigurable low noise amplifier (RLNA) MMIC based on a 90nm T-gate GaN technology. This GaN technology is characterized by a peak fT of 145 GHz, an NF min of < 0.5dB at 10GHz, and a FET Switch FOM of −900GHz. The SIX-band RLNA was designed to reconfigure between 3-3.5GHz and 9-11GHz bands and achieves a NF of 1.3-1.5dB and 1.2-1.5dB and a gain of> 17.5dB and 13.5dB in the respective bands. The X-band NF is a 0.5dB improvement with respect to a previously reported SIX-band reconfigurable LNA implemented in a 0.15um GaN technology [3]–[4] and is believed to be among the lowest NF reported at X-band by a robust GaN-based MMIC LNA with more than 15% BW. The 90nm GaN RLNA achieves an OIP3 of 33.6-36dBm and 33.2-36dBm at S- and X-band, respectively, and obtains an input power survivability of > 37dBm (5W) with less than 0.1dB degradation in gain and NF performance. The band-reconfigurable performance capability is attractive for adaptive and robust EW, radar, as well as future commercial wireless communication systems.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116978930","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications ku波段70w级GaN内部匹配高功率放大器，宽偏置频率高达400mhz，用于多载波卫星通信

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392968

Takaaki Yoshioka, K. Harauchi, Takumi Sugitani, T. Yamasaki, Hiroaki Ichinohe, M. Miyashita, Kazuya Yamamoto, S. Goto

{"title":"A Ku-band 70-W Class GaN Internally Matched High Power Amplifier with Wide Offset Frequencies of up to 400 MHz for Multi-Carrier Satellite Communications","authors":"Takaaki Yoshioka, K. Harauchi, Takumi Sugitani, T. Yamasaki, Hiroaki Ichinohe, M. Miyashita, Kazuya Yamamoto, S. Goto","doi":"10.1109/BCICTS48439.2020.9392968","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392968","url":null,"abstract":"This paper describes a Ku-band 70-W class GaN internally matched high power amplifier (HPA) with wide offset frequencies of up to 400 MHz for multi-carrier satellite communications. Our proposed output matching circuit uses three different kinds of difference-frequency short-circuits for realizing the wide offset frequency operation; two of the three are embedded into a tournament-shaped output matching circuit inside the HPA package and the rest is embedded into the drain bias feed placed outside the package. In order to verify the short-circuit design and its effectiveness, the Ku-band GaN HPA was designed, fabricated, and measured. The measurement shows that the HPA achieves a peak output power of 48.6 dBm while keeping a linear output power of over 40 dBm and −26-dBc IMD3 over wide offset frequencies of up to 400 MHz. To the authors' knowledge, this HPA has the record linearity of the 400-MHz wide offset frequencies and low IMD3 of less than −25 dBc among the ever reported Ku-band GaN HPAs for multi-carrier satellite communications.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"14 3","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120991356","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

A 24 GHz Sub-Harmonically Pumped Resistive Mixer in GaN HEMT Technology GaN HEMT技术中的24ghz次谐波泵浦阻式混频器

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392981

Yu Yan, T. N. T. Do, D. Kuylenstierna

引用次数: 0

230–305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology 基于60nm InP-HEMT技术的低q中和技术的230 - 305ghz、> 10dbm输出功率宽带功率放大器

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392976

H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka

{"title":"230–305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology","authors":"H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka","doi":"10.1109/BCICTS48439.2020.9392976","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392976","url":null,"abstract":"This paper presents a wideband 300-GHz power amplifier (PA) using a neutralization technique. The PA is composed of unit amplifiers (UAs), each of which consists of six-stage common-source amplification stages with a low-Q neutralization circuit. The neutralization circuit includes a transmission-line-based inductor, DC-cut capacitor, and series resistor to broaden the resonance of neutralization. This results in flat input/output impedances and gain characteristics of the amplification stages; therefore, the wideband UA characteristics can be observed. The wideband UA circuit is implemented using this wideband UAs and packaged in a waveguide (WG) module using the ridge coupler as a broadband IC-to-WG transition. The PA has a maximum small-signal gain of 31 dB for 245–250 GHz and saturated output power (Psat) of 11.7 dBm at 265 GHz. Thanks to the low-Q neutralization, the PA module exhibits broadband output-power characteristics, and the Psat is more than 10 dBm for 75-GHz bandwidth, i.e., from 230 to 305 GHz.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115527001","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Fast pixel sensors for ionizing particles integrated in SiGe BiCMOS 快速像素传感器电离粒子集成在SiGe BiCMOS

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392947

L. Paolozzi, G. Iacobucci, P. Valerio

{"title":"Fast pixel sensors for ionizing particles integrated in SiGe BiCMOS","authors":"L. Paolozzi, G. Iacobucci, P. Valerio","doi":"10.1109/BCICTS48439.2020.9392947","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392947","url":null,"abstract":"The monolithic integration of a pixelated sensor for ionizing radiation in a CMOS process enables the development of a new class of instrumentation for nuclear medicine, space applications and high-energy physics: the simplified interconnection of the monolithic assembly and the reduced cost offered by large volume commercial manufacturers allow building compact detectors with large volumes of silicon. Two possible applications of these sensors, presented in this work, are scanners for Positron Emission Tomography and high-energy physics experiments with the state-of-the-art tracking and background suppression capability. The major challenge shared by these devices is achieving a time resolution of 100 ps or better with a limited power budget, while using a cost-effective technology. SiGe HBTs offer the analogue performance required for this integration. Two alternative designs of a monolithic silicon pixel sensor in a 130nm SiGe BiCMOS process are proposed, one that optimizes the simplicity of integration for a silicon based TOF -PET scanner, one that enhances the tracking capability for the pre-shower detector of the FASER experiment at CERN.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128765715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS 130纳米SiGe BiCMOS超宽带低功耗70 GHz有源平衡

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392960

Aniello Franzese, M. Eissa, Thomas Mausolf, D. Kissinger, R. Negra, A. Malignaggi

{"title":"Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS","authors":"Aniello Franzese, M. Eissa, Thomas Mausolf, D. Kissinger, R. Negra, A. Malignaggi","doi":"10.1109/BCICTS48439.2020.9392960","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392960","url":null,"abstract":"This paper presents an ultra broadband low-power single-ended to differential active balun. The balun has been fabricated using IHP SG13S SiGe 130-nm BiCMOS technology, which features an ft of 250 GHz and an fmax of 340 GHz. Conversely to other works, the designed circuit is based exclusively on two transistors in common-emitter and common-base configuration, fed by a current source with a high output impedance. Moreover, the design does not employ inductors accommodating a compact form-factor. A theoretical analysis demonstrates a single-ended to single-ended identical gain in amplitude for both outputs with opposite phase. Small-signal measurements validate the proposed work up to 70 GHz achieving a maximum phase and amplitude imbalance of 3.2° and 0.65 dB, respectively. Furthermore, a peak gain of 2.3 dB and a 3-dB bandwidth of 57 GHz are shown. Large-signal measurements show an input 1-dB compression point (IP1dB) better than −7dBm along the whole 3-dB bandwidth, together with a power consumption of 37 mW. The occupied silicon area is 0.42 mm2, pads included.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129736861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Materials and Device Engineering for High-Performance Gallium Oxide Devices 高性能氧化镓器件的材料与器件工程

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392905

Zhanbo Xia, N. K. Kalarickal, S. Rajan

引用次数: 0

A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology 基于90nm t栅GaN HEMT技术的高效4-18 GHz GaN MMIC功率放大器

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392935

Shuoqi Chen, Vipan Kumar, Yu Cao

{"title":"A High Efficiency 4–18 GHz GaN MMIC Power Amplifier based on 90nm T-gate GaN HEMT Technology","authors":"Shuoqi Chen, Vipan Kumar, Yu Cao","doi":"10.1109/BCICTS48439.2020.9392935","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392935","url":null,"abstract":"This paper describes the design and measured performance of a wideband power amplifier MMIC based on Qorvo's 90nm T-gate GaN HEMT technology. This GaN technology is characterized by a peak fT of 145 GHz, a PAE > 55%, and a P3dB output power density> 2.0W/mm at 35 GHz. The amplifier design utilizes the non-uniform distributed power amplifier (NDPA) architecture with an wideband edge coupling 1:4 output transformer to achieve high efficiency and power. This single-stage NDPA produces 3 – 5.3 W of output power over the 4 – 18 GHz band with a PAE of 25.6 – 35.7% at 13 V supply voltage. The large-signal gain varies between 7.7 dB at the low band edge and 10.2dB in most of the band. Meanwhile, the NDPA has achieved a small-signal gain of 12.0 – 14.5 dB over the same band. Additionally, 5.6 – 7.0 W of output power with 21–34.2% of PAE has been measured up to 18 V supply voltage. Based on the advantages of the 90nm GaN T-gate HEMT technology, the design has established new benchmarks of efficiency for PAs operating at similar band compared to other state-of-the-art GaN NDPAs.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116886120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K 在4.3 ~ 423 K范围内模拟SiGe:C hbt中薄片电阻和接触电阻的温度依赖性

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392930

Xiaodi Jin, Christoph Weimer, Yaxin Zhang, M. Schröter

引用次数: 1

Device Scaling roadmap and its implications for Logic and Analog platform 器件缩放路线图及其对逻辑和模拟平台的影响

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392980

A. Spessot, B. Parvais, Amita Rawat, K. Miyaguchi, P. Weckx, D. Jang, J. Ryckaert

引用次数: 3