Fast pixel sensors for ionizing particles integrated in SiGe BiCMOS

The monolithic integration of a pixelated sensor for ionizing radiation in a CMOS process enables the development of a new class of instrumentation for nuclear medicine, space applications and high-energy physics: the simplified interconnection of the monolithic assembly and the reduced cost offered by large volume commercial manufacturers allow building compact detectors with large volumes of silicon. Two possible applications of these sensors, presented in this work, are scanners for Positron Emission Tomography and high-energy physics experiments with the state-of-the-art tracking and background suppression capability. The major challenge shared by these devices is achieving a time resolution of 100 ps or better with a limited power budget, while using a cost-effective technology. SiGe HBTs offer the analogue performance required for this integration. Two alternative designs of a monolithic silicon pixel sensor in a 130nm SiGe BiCMOS process are proposed, one that optimizes the simplicity of integration for a silicon based TOF -PET scanner, one that enhances the tracking capability for the pre-shower detector of the FASER experiment at CERN.