H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka
{"title":"基于60nm InP-HEMT技术的低q中和技术的230 - 305ghz、> 10dbm输出功率宽带功率放大器","authors":"H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka","doi":"10.1109/BCICTS48439.2020.9392976","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband 300-GHz power amplifier (PA) using a neutralization technique. The PA is composed of unit amplifiers (UAs), each of which consists of six-stage common-source amplification stages with a low-Q neutralization circuit. The neutralization circuit includes a transmission-line-based inductor, DC-cut capacitor, and series resistor to broaden the resonance of neutralization. This results in flat input/output impedances and gain characteristics of the amplification stages; therefore, the wideband UA characteristics can be observed. The wideband UA circuit is implemented using this wideband UAs and packaged in a waveguide (WG) module using the ridge coupler as a broadband IC-to-WG transition. The PA has a maximum small-signal gain of 31 dB for 245–250 GHz and saturated output power (Psat) of 11.7 dBm at 265 GHz. Thanks to the low-Q neutralization, the PA module exhibits broadband output-power characteristics, and the Psat is more than 10 dBm for 75-GHz bandwidth, i.e., from 230 to 305 GHz.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"230–305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology\",\"authors\":\"H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka\",\"doi\":\"10.1109/BCICTS48439.2020.9392976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband 300-GHz power amplifier (PA) using a neutralization technique. The PA is composed of unit amplifiers (UAs), each of which consists of six-stage common-source amplification stages with a low-Q neutralization circuit. The neutralization circuit includes a transmission-line-based inductor, DC-cut capacitor, and series resistor to broaden the resonance of neutralization. This results in flat input/output impedances and gain characteristics of the amplification stages; therefore, the wideband UA characteristics can be observed. The wideband UA circuit is implemented using this wideband UAs and packaged in a waveguide (WG) module using the ridge coupler as a broadband IC-to-WG transition. The PA has a maximum small-signal gain of 31 dB for 245–250 GHz and saturated output power (Psat) of 11.7 dBm at 265 GHz. Thanks to the low-Q neutralization, the PA module exhibits broadband output-power characteristics, and the Psat is more than 10 dBm for 75-GHz bandwidth, i.e., from 230 to 305 GHz.\",\"PeriodicalId\":355401,\"journal\":{\"name\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS48439.2020.9392976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS48439.2020.9392976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
230–305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology
This paper presents a wideband 300-GHz power amplifier (PA) using a neutralization technique. The PA is composed of unit amplifiers (UAs), each of which consists of six-stage common-source amplification stages with a low-Q neutralization circuit. The neutralization circuit includes a transmission-line-based inductor, DC-cut capacitor, and series resistor to broaden the resonance of neutralization. This results in flat input/output impedances and gain characteristics of the amplification stages; therefore, the wideband UA characteristics can be observed. The wideband UA circuit is implemented using this wideband UAs and packaged in a waveguide (WG) module using the ridge coupler as a broadband IC-to-WG transition. The PA has a maximum small-signal gain of 31 dB for 245–250 GHz and saturated output power (Psat) of 11.7 dBm at 265 GHz. Thanks to the low-Q neutralization, the PA module exhibits broadband output-power characteristics, and the Psat is more than 10 dBm for 75-GHz bandwidth, i.e., from 230 to 305 GHz.
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