Device Scaling roadmap and its implications for Logic and Analog platform

A. Spessot, B. Parvais, Amita Rawat, K. Miyaguchi, P. Weckx, D. Jang, J. Ryckaert
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引用次数: 3

Abstract

In the 22nm node, FinFET has been introduced to continue CMOS Logic scaling. The continuous device shrinking needed to reach node 3nm and beyond bring us into the post FinFET era, which requires new device architectures. In this paper we review the device evolution to vertically stacked Nanosheets, Forksheet, and CFET in conjunction with buried power rails and wrap around contact. The impact of variability at scaled dimensions and the requirement for a complete CMOS platform including I/O are discussed. We then review how these elements affect the analog/RF performance of advanced devices in a holistic view.
器件缩放路线图及其对逻辑和模拟平台的影响
在22nm节点,FinFET已被引入以继续CMOS逻辑缩放。达到节点3nm及以上所需的器件不断缩小将我们带入后FinFET时代,这需要新的器件架构。在本文中,我们回顾了器件的发展到垂直堆叠的纳米片,叉片和cet结合埋地电源轨和包裹接触。讨论了可变因素在尺度上的影响以及对包括I/O在内的完整CMOS平台的要求。然后,我们从整体角度回顾了这些元素如何影响高级器件的模拟/射频性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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