Materials and Device Engineering for High-Performance Gallium Oxide Devices

Abstract

Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, good transport properties, well-controlled doping, and large-area melt-grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high-performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.