230–305 GHz, > 10-dBm-Output-Power Wideband Power Amplifier Using Low-Q Neutralization Technique in 60-nm InP-HEMT Technology

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392976

H. Hamada, T. Tsutsumi, A. Pander, Masahito Nakamura, G. Itami, H. Matsuzaki, H. Sugiyama, H. Nosaka

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引用次数: 1

Abstract

This paper presents a wideband 300-GHz power amplifier (PA) using a neutralization technique. The PA is composed of unit amplifiers (UAs), each of which consists of six-stage common-source amplification stages with a low-Q neutralization circuit. The neutralization circuit includes a transmission-line-based inductor, DC-cut capacitor, and series resistor to broaden the resonance of neutralization. This results in flat input/output impedances and gain characteristics of the amplification stages; therefore, the wideband UA characteristics can be observed. The wideband UA circuit is implemented using this wideband UAs and packaged in a waveguide (WG) module using the ridge coupler as a broadband IC-to-WG transition. The PA has a maximum small-signal gain of 31 dB for 245–250 GHz and saturated output power (Psat) of 11.7 dBm at 265 GHz. Thanks to the low-Q neutralization, the PA module exhibits broadband output-power characteristics, and the Psat is more than 10 dBm for 75-GHz bandwidth, i.e., from 230 to 305 GHz.

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基于60nm InP-HEMT技术的低q中和技术的230 - 305ghz、> 10dbm输出功率宽带功率放大器

本文提出了一种采用中和技术的宽带300ghz功率放大器。PA由单元放大器(UAs)组成，每个单元放大器由6级共源放大级和低q中和电路组成。中和电路包括基于传输线的电感、直流切断电容器和串联电阻，以扩大中和的谐振。这导致平坦的输入/输出阻抗和放大级的增益特性;因此，可以观察到宽带UA特性。宽带UA电路使用该宽带UA实现，并使用脊线耦合器封装在波导(WG)模块中，作为宽带ic到WG的过渡。该放大器在245-250 GHz时的最大小信号增益为31 dB, 265 GHz时的饱和输出功率(Psat)为11.7 dBm。得益于低q中和，PA模块具有宽带输出功率特性，在75 GHz带宽(即230至305 GHz)范围内，Psat大于10 dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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