{"title":"高性能氧化镓器件的材料与器件工程","authors":"Zhanbo Xia, N. K. Kalarickal, S. Rajan","doi":"10.1109/BCICTS48439.2020.9392905","DOIUrl":null,"url":null,"abstract":"Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, good transport properties, well-controlled doping, and large-area melt-grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high-performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"78 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Materials and Device Engineering for High-Performance Gallium Oxide Devices\",\"authors\":\"Zhanbo Xia, N. K. Kalarickal, S. Rajan\",\"doi\":\"10.1109/BCICTS48439.2020.9392905\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, good transport properties, well-controlled doping, and large-area melt-grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high-performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.\",\"PeriodicalId\":355401,\"journal\":{\"name\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"78 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS48439.2020.9392905\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS48439.2020.9392905","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Materials and Device Engineering for High-Performance Gallium Oxide Devices
Gallium Oxide is an ultra-wide band gap semiconductor that provides key benefits for high-performance power devices, including high electric breakdown field strength, good transport properties, well-controlled doping, and large-area melt-grown native substrates. The unique properties of this material also provide significant opportunities for heterostructure and device engineering. In this paper, we discuss some key advances toward achieving high-performance devices based on Gallium Oxide, and discuss future opportunities and challenges in this exciting area of research.