Modeling the temperature dependence of sheet and contact resistances in SiGe:C HBTs from 4.3 to 423 K

Abstract

The temperature dependence of series resistance components in SiGe:C HBTs was measured from 4.3 to 423 K. A physics-based description as well as various widely used analytical formulations for modeling the temperature dependence of sheet and contact resistances were compared with the measured data. The standard two-parameter power law model only covers a limited temperature range, while three-parameter models exhibit good accuracy over the entire measured temperature range, and a four-parameter physics-based model shows excellent accuracy. This is the first demonstration for modeling the various sheet resistances from 4.3 to 423 K.