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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)最新文献

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Millimeter-Wave GaN SSPAs: Technology to Power 5G and the Future 毫米波GaN sspa:推动5G和未来的技术
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392957
James Schellnberg
{"title":"Millimeter-Wave GaN SSPAs: Technology to Power 5G and the Future","authors":"James Schellnberg","doi":"10.1109/BCICTS48439.2020.9392957","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392957","url":null,"abstract":"Recent advances in millimeter-wave GaN power technology are presented together with 5G SSPA system requirements, specifically the “High-Band” (millimeter-wave) requirements. The state-of-the-art of GaN power MMICs operating from 27 to 120 GHz is highlighted in terms of output power, efficiency and frequency of operation. At the low end of the band, MMIC power levels of 10 W CW are readily available with laboratory results as high as 40 W. Efficiencies (PAEs) typically range in the mid to high 30s, with some results as high as 42%, again at the lower end of the band. By using power combining techniques, power levels as high as 40 W CW at W-band frequencies are reported. 5G linearization and efficiency enhancement techniques are introduced. A projection of where the technology is headed is also presented.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"6 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127018970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing 用于量子计算的低温控制和读出电路设计的SiGe HBTs的紧凑建模
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392937
Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, M. Schröter, J. Cressler
{"title":"Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing","authors":"Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, M. Schröter, J. Cressler","doi":"10.1109/BCICTS48439.2020.9392937","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392937","url":null,"abstract":"A HICUM/L0 compact model is extracted for advanced SiGe HBTs operating at 12 K, targeting potential use for control and readout applications in quantum computing. Due to the presence of transistor non-idealities, extraction procedures are modified from room temperature approaches. The resultant compact model shows good accuracy in both small-signal and large-signal prediction when compared to 12 K measurements for a wideband cryogenic low noise amplifier. Important factors for model accuracy are investigated through sensitivity analysis. This is the first demonstration of a DC, small-signal, and large-signal compact model for SiGe HBTs operating at deep cryogenic temperatures.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128664014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA 18-44GHz K/ ka波段鲁棒-35.5 dbm可重构90nm GaN HEMT LNA
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392952
K. Kobayashi, Vipan Kumar, C. Campbell, Shuoqi Chen, Yu Cao
{"title":"18-44GHz K/Ka-band Robust-35.5dBm Reconfigurable 90nm GaN HEMT LNA","authors":"K. Kobayashi, Vipan Kumar, C. Campbell, Shuoqi Chen, Yu Cao","doi":"10.1109/BCICTS48439.2020.9392952","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392952","url":null,"abstract":"This paper describes the design and measured performance of a robust millimeter-wave reconfigurable low noise MMIC amplifier based on a 90nm T-gate GaN technology. The GaN technology is characterized by a peak fT of 145 GHz, an NF min of <1.2dB up to 50GHz, and a FET Switch FOM of −900GHz. The 3-bit reconfigurable LNA was designed for tunable performance over the 18-44GHz octave-plus operating band encompassing the 5G mmW wireless frequencies. Under optimized high-band gain and low NF setting, the amplifier achieves gains of 24.2, 23, 21, 18, and 14.3dB and NF's of 1.9, 1.5, 1.6, 2.1, and 2.5dB at 18, 24, 28, 39, and 44GHz, respectively. Under an input IP3 linearity optimized setting and bias, the LNA achieves an input IP3 greater than −1.7dBm across the full band. The amplifier survives a CW RF step stress up to 35.5 dBm with no significant broadband S-parameter degradation. The robust and reconfigurable capabilities are attractive for adaptive EW, radar, as well as future commercial mmW communication systems.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123058107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology 基于SiGe-BiCMOS技术的高线性120 GS/s 2:1模拟多路复用器
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392970
Michael Collisi, M. Möller
{"title":"A 120 GS/s 2:1 Analog Multiplexer with High Linearity in SiGe-BiCMOS Technology","authors":"Michael Collisi, M. Möller","doi":"10.1109/BCICTS48439.2020.9392970","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392970","url":null,"abstract":"A 2:1 analog multiplexer (AMUX) in SiGe BiCMOS technology with a record sampling rate for SiGe-technology of 120 GS/s, is presented. The AMUX is intended to double the signal bandwidth of two 8-bit digital-to-analog-converters and achieves an effective resolution (ENoB) of 7.7 bit, at low frequencies as well as 5.1 bit at 48.8 GHz and 4.1 bit at 58.6 GHz for sampling rates of 100 GS/s and 120 GS/s, respectively. These are the highest resolutions reported for an AMUX in any kind of semiconductor technology. The results were obtained by a simple selector-circuit concept that was carefully optimized in the frequency domain with regard to balanced signal paths. The AMUX performance was demonstrated by measurements on an RF-module bondwire-assembly of the AMUX-chip.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128199550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications 一种用于5G通信的宽带高效ka波段GaN多尔蒂功率放大器
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392982
Y. Yamaguchi, K. Nakatani, S. Shinjo
{"title":"A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications","authors":"Y. Yamaguchi, K. Nakatani, S. Shinjo","doi":"10.1109/BCICTS48439.2020.9392982","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392982","url":null,"abstract":"This paper presents a wideband and high efficiency Ka-band gallium nitride (GaN) doherty power amplifier (DPA) fabricated by 0.15µm GaN-HEMT on SiC technology. The Tee-line network impedance inverter which is formed utilizing output capacitance of transistors was designed to increase operation bandwidth. Moreover, it was possible to realize the impedance inverter at millimeterwave band by using Metal-Insulator-Metal capacitor on via-holes (MIM -on-Via) structure which can decrease parasitic inductances. As a result, the fabricated 2-stage DPA has achieved a measured saturation output power of 36.1–36.5dBm, a 6dB back-off PAE of 25-27%, and a peak PAE of 26.7–31.8% in the frequency band of 26–30GHz. This fractional band is 14.6%. To the best of authors' knowledge, this performance is the widest bandwidth with high efficiency in Ka-band GaN DPA. Additionally, the measured ACPR is −31.1dBc and EVM is 3.2% at the average output power of 28dBm under 45MHz 64QAM modulated signal.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132656589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 18
Using Channel Physical Relationships in pHEMT Modeling 在pHEMT建模中使用通道物理关系
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392974
Yingying Yang, Xiao Ping Li, C. Cismaru, R. Ramanathan
{"title":"Using Channel Physical Relationships in pHEMT Modeling","authors":"Yingying Yang, Xiao Ping Li, C. Cismaru, R. Ramanathan","doi":"10.1109/BCICTS48439.2020.9392974","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392974","url":null,"abstract":"In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133829942","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and Applications 光电子超宽带信号处理:概念、设备和应用
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392969
C. Koos, S. Randel, W. Freude, T. Zwick, C. Scheytt, J. Witzens, M. Walther, T. Harter, S. Ummethala, C. Kieninger, H. Zwickel, P. Marin-Palomo, S. Muehlbrandt, C. Füllner, J. Schaefer, Sergiy Gudyriev, Andrea Zazzi, Juliana Müller, A. Tessmann
{"title":"Photonic-Electronic Ultra-Broadband Signal Processing: Concepts, Devices, and Applications","authors":"C. Koos, S. Randel, W. Freude, T. Zwick, C. Scheytt, J. Witzens, M. Walther, T. Harter, S. Ummethala, C. Kieninger, H. Zwickel, P. Marin-Palomo, S. Muehlbrandt, C. Füllner, J. Schaefer, Sergiy Gudyriev, Andrea Zazzi, Juliana Müller, A. Tessmann","doi":"10.1109/BCICTS48439.2020.9392969","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392969","url":null,"abstract":"Combining photonic integrated circuits (PIC) with millimeter-wave electronics opens novel perspectives in generation and detection of ultra-broadband signals with disruptive potential for a wide variety of applications. Here, we will give an overview on our recent progress in the field of ultra-broadband photonic-electronic signal processing, covering device concepts such as silicon plasmonic integration, signal processing concepts such as Kramers-Kronig-based phase reconstruction of THz signals, as well as application demonstrations in the field of high-speed wireless data transmission.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134266697","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
III-V Nanowire MOSFETs: RF-Properties and Applications 纳米线mosfet: rf特性及应用
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392932
L. Wernersson
{"title":"III-V Nanowire MOSFETs: RF-Properties and Applications","authors":"L. Wernersson","doi":"10.1109/BCICTS48439.2020.9392932","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392932","url":null,"abstract":"III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f -investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm−3 eV−1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"4 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134362587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications 高压单片集成GaN+CMOS逻辑电路设计与电热分析
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392934
Pilsoon Choi, Bugra Kanargi, K. Lee, C. Boon, E. Wang, C. S. Tan, D. Antoniadis, E. Fitzgerald
{"title":"Monolithically Integrated GaN+CMOS Logic Circuits Design and Electro-Thermal Analysis for High-Voltage Applications","authors":"Pilsoon Choi, Bugra Kanargi, K. Lee, C. Boon, E. Wang, C. S. Tan, D. Antoniadis, E. Fitzgerald","doi":"10.1109/BCICTS48439.2020.9392934","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392934","url":null,"abstract":"This paper presents a logic inverter circuit consisting of both CMOS and GaN devices to drive high-torque DC motors requiring high voltages in various robotics applications. The GaN+CMOS inverter can be monolithically integrated with CMOS digital circuits on a single die, accommodating a 5V CMOS logic level input and providing a 30V output voltage using depletion-mode GaN HEMTs without negative gate bias circuitry. Electro-thermal simulations are also performed to analyze the temperature of CMOS devices affected by nearby GaN HEMTs.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132091152","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology 基于sige技术的高效120ghz和240ghz信号源
2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI: 10.1109/BCICTS48439.2020.9392945
F. Vogelsang, D. Starke, Jonathan Wittemeier, H. Rücker, N. Pohl
{"title":"A Highly-Efficient 120 GHz and 240 GHz Signal Source in A SiGe-Technology","authors":"F. Vogelsang, D. Starke, Jonathan Wittemeier, H. Rücker, N. Pohl","doi":"10.1109/BCICTS48439.2020.9392945","DOIUrl":"https://doi.org/10.1109/BCICTS48439.2020.9392945","url":null,"abstract":"This work presents a highly-efficient signal source for radar applications at 120 GHz and 240 GHz in a 130-nm SiGe-technology. A low DC-Power consumption of only 78 mW - respectively 264 mW is needed to provide as much as 7.1 dBm (7 dBm) output power at RF-frequencies. The resulting DC-to-RF efficiency is 6.58 (1.88) %. For the signal generation, a Colpitts VCO followed by a bootstrapped gilbert doubler and two power amplifier stages are used at a supply voltage of 3.3 V. The used technology offers new HBTs with an ft of around 470 GHz and fmax of 700 GHz. For the use in radar applications, the VCO frequency can be swept with a bandwidth of 16.3 GHz, while the center frequency can be adjusted using laser-fuses.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128410104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
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