Using Channel Physical Relationships in pHEMT Modeling

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392974

Yingying Yang, Xiao Ping Li, C. Cismaru, R. Ramanathan

引用次数: 0

Abstract

In this paper, we establish relationships of a few key process control monitors (PCMs) based on device physics and a design of experiment (DOE); these relations can simplify the pHEMT device model and increase its accuracy.

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在pHEMT建模中使用通道物理关系

本文基于器件物理学和实验设计，建立了几个关键过程控制监测器之间的关系;这些关系可以简化pHEMT器件模型，提高模型的精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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