{"title":"一种用于5G通信的宽带高效ka波段GaN多尔蒂功率放大器","authors":"Y. Yamaguchi, K. Nakatani, S. Shinjo","doi":"10.1109/BCICTS48439.2020.9392982","DOIUrl":null,"url":null,"abstract":"This paper presents a wideband and high efficiency Ka-band gallium nitride (GaN) doherty power amplifier (DPA) fabricated by 0.15µm GaN-HEMT on SiC technology. The Tee-line network impedance inverter which is formed utilizing output capacitance of transistors was designed to increase operation bandwidth. Moreover, it was possible to realize the impedance inverter at millimeterwave band by using Metal-Insulator-Metal capacitor on via-holes (MIM -on-Via) structure which can decrease parasitic inductances. As a result, the fabricated 2-stage DPA has achieved a measured saturation output power of 36.1–36.5dBm, a 6dB back-off PAE of 25-27%, and a peak PAE of 26.7–31.8% in the frequency band of 26–30GHz. This fractional band is 14.6%. To the best of authors' knowledge, this performance is the widest bandwidth with high efficiency in Ka-band GaN DPA. Additionally, the measured ACPR is −31.1dBc and EVM is 3.2% at the average output power of 28dBm under 45MHz 64QAM modulated signal.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"18","resultStr":"{\"title\":\"A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications\",\"authors\":\"Y. Yamaguchi, K. Nakatani, S. Shinjo\",\"doi\":\"10.1109/BCICTS48439.2020.9392982\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a wideband and high efficiency Ka-band gallium nitride (GaN) doherty power amplifier (DPA) fabricated by 0.15µm GaN-HEMT on SiC technology. The Tee-line network impedance inverter which is formed utilizing output capacitance of transistors was designed to increase operation bandwidth. Moreover, it was possible to realize the impedance inverter at millimeterwave band by using Metal-Insulator-Metal capacitor on via-holes (MIM -on-Via) structure which can decrease parasitic inductances. As a result, the fabricated 2-stage DPA has achieved a measured saturation output power of 36.1–36.5dBm, a 6dB back-off PAE of 25-27%, and a peak PAE of 26.7–31.8% in the frequency band of 26–30GHz. This fractional band is 14.6%. To the best of authors' knowledge, this performance is the widest bandwidth with high efficiency in Ka-band GaN DPA. Additionally, the measured ACPR is −31.1dBc and EVM is 3.2% at the average output power of 28dBm under 45MHz 64QAM modulated signal.\",\"PeriodicalId\":355401,\"journal\":{\"name\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"18\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS48439.2020.9392982\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS48439.2020.9392982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 18
摘要
提出了一种基于SiC技术、采用0.15 μ m GaN- hemt制备的宽带高效ka波段氮化镓(GaN)多赫蒂功率放大器(DPA)。设计了利用晶体管输出电容构成的三线网络阻抗逆变器，以提高运算带宽。此外，利用金属-绝缘体-金属电容在过孔(MIM -on-Via)上的结构可以实现毫米波频段的阻抗逆变器，从而降低寄生电感。结果表明，该2级DPA在26-30GHz频段的实测饱和输出功率为36.1-36.5dBm, 6dB回退PAE为25-27%，峰值PAE为26.7-31.8%。分数带是14.6%据作者所知，这种性能是ka波段GaN DPA中带宽最宽、效率最高的。此外，在45MHz 64QAM调制信号下，平均输出功率为28dBm时，测量到的ACPR为−31.1dBc, EVM为3.2%。
A Wideband and High Efficiency Ka-band GaN Doherty Power Amplifier for 5G Communications
This paper presents a wideband and high efficiency Ka-band gallium nitride (GaN) doherty power amplifier (DPA) fabricated by 0.15µm GaN-HEMT on SiC technology. The Tee-line network impedance inverter which is formed utilizing output capacitance of transistors was designed to increase operation bandwidth. Moreover, it was possible to realize the impedance inverter at millimeterwave band by using Metal-Insulator-Metal capacitor on via-holes (MIM -on-Via) structure which can decrease parasitic inductances. As a result, the fabricated 2-stage DPA has achieved a measured saturation output power of 36.1–36.5dBm, a 6dB back-off PAE of 25-27%, and a peak PAE of 26.7–31.8% in the frequency band of 26–30GHz. This fractional band is 14.6%. To the best of authors' knowledge, this performance is the widest bandwidth with high efficiency in Ka-band GaN DPA. Additionally, the measured ACPR is −31.1dBc and EVM is 3.2% at the average output power of 28dBm under 45MHz 64QAM modulated signal.
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