III-V Nanowire MOSFETs: RF-Properties and Applications

Abstract

III-V MOSFETs provide improved electrostatic control at scaled gate lengths combined with a considerable reduction in gate leakage current. Following the natural transistor evolution, we investigate vertical III-V nanowire MOSFETs and fabricate MOSFETs with gm>3 S/mm integrated on Si substrates. Careful investigations of the dynamic properties show high MSG-value of 14.5 dB at 20 GHz with a small-signal III-V MOSFET model including also trap response related to defects within the high-k film. From 1/f -investigations we determine the distribution of defects in the gate-stack and find a local minimum around the conduction band edge with a Nbt between mid-1018 and mid-1019 cm−3 eV−1. The III-V nanowire MOSFETs are used to design D-band LNAs with competitive performance. They also show promise for integration of pMOSFETs, TFETs, and RRAM elements opening a wide range of applications.