微波光子学应用的SiGe微波光电晶体管

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392985

Z. Tegegne, M. Rosales, Francesco Peressutti, J. Laheurte, C. Algani, J. Nanni, G. Tartarini, C. Viana, J. Polleux

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引用次数: 0

摘要

本文综述了微波光电晶体管在SiGe双极和BiCMOS技术中的发展。介绍了SiGe/Si异质结双极光电晶体管(HPT)的物理和设计。全面分析了光探测机制及其在结构中的定位。在描述了缩放规则之后，介绍了其在微波光子学领域的应用，用于短程和低成本应用。然后强调了包括频率增加，功能扩大甚至芯片上光学链路在内的观点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe Microwave Phototransistors for Microwave-Photonics Applications

This paper gives an overview on the development of microwave phototransistors within SiGe Bipolar and BiCMOS technologies. The physics and design of SiGe/Si Heterojunction Bipolar Phototransistors (HPT) are covered. A comprehensive analysis of the photodetection mechanisms and its localization into the structure is provided. After a description of the scaling rules, applications are presented in the field of Microwave-Photonics for short range and low-cost applications. Perspectives are then highlighted that includes the frequency increase, the enlargement of functionality and even on-chip optical links.

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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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