用于低功率宽带相控阵接收机的28-37 GHz三级变压器耦合SiGe LNA,最小NF为2.5 dB

Abdulrahman A. Alhamed, G. Rebeiz
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引用次数: 7

摘要

本工作提出了一种基于变压器的三级SiGe低噪声放大器(LNA),实现在塔半导体SBC18S5工艺中。该设计采用t型线圈网络实现宽带输入匹配,采用耦合变压器实现宽带级间匹配。LNA具有20db增益和3db带宽bbb90ghz,最小噪声系数(NF)为2.5 dB,功耗为13mw。LNA还可以在6mw的功耗下工作,而NF仅增加0.3 dB,并且在33ghz下,以1mw的直流功耗实现3db增益。据作者所知,这项工作展示了中心频率高于30ghz的毫米波放大器的最高品质系数(FoM)之一。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A 28–37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers
This work presents a transformer-based three-stage SiGe low-noise amplifier (LNA) implemented in the Tower Semiconductor SBC18S5 process. The design realizes wideband input matching using a T-coil network, and wideband interstage matching using coupled transformers. The LNA exhibits 20 dB gain with a 3-dB bandwidth > 9 GHz and has a minimum noise figure (NF) of 2.5 dB with 13 mW of power consumption. The LNA can also operate at 6 mW power consumption with only a 0.3 dB increase in the NF, and achieves 3 dB of gain for 1 mW of DC power consumption at 33 GHz. To the author's knowledge, this work presents one of the highest figure-of-merit (FoM) of mm-wave amplifiers with a center frequency above 30 GHz.
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