{"title":"用于低功率宽带相控阵接收机的28-37 GHz三级变压器耦合SiGe LNA,最小NF为2.5 dB","authors":"Abdulrahman A. Alhamed, G. Rebeiz","doi":"10.1109/BCICTS48439.2020.9392929","DOIUrl":null,"url":null,"abstract":"This work presents a transformer-based three-stage SiGe low-noise amplifier (LNA) implemented in the Tower Semiconductor SBC18S5 process. The design realizes wideband input matching using a T-coil network, and wideband interstage matching using coupled transformers. The LNA exhibits 20 dB gain with a 3-dB bandwidth > 9 GHz and has a minimum noise figure (NF) of 2.5 dB with 13 mW of power consumption. The LNA can also operate at 6 mW power consumption with only a 0.3 dB increase in the NF, and achieves 3 dB of gain for 1 mW of DC power consumption at 33 GHz. To the author's knowledge, this work presents one of the highest figure-of-merit (FoM) of mm-wave amplifiers with a center frequency above 30 GHz.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"264 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A 28–37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers\",\"authors\":\"Abdulrahman A. Alhamed, G. Rebeiz\",\"doi\":\"10.1109/BCICTS48439.2020.9392929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work presents a transformer-based three-stage SiGe low-noise amplifier (LNA) implemented in the Tower Semiconductor SBC18S5 process. The design realizes wideband input matching using a T-coil network, and wideband interstage matching using coupled transformers. The LNA exhibits 20 dB gain with a 3-dB bandwidth > 9 GHz and has a minimum noise figure (NF) of 2.5 dB with 13 mW of power consumption. The LNA can also operate at 6 mW power consumption with only a 0.3 dB increase in the NF, and achieves 3 dB of gain for 1 mW of DC power consumption at 33 GHz. To the author's knowledge, this work presents one of the highest figure-of-merit (FoM) of mm-wave amplifiers with a center frequency above 30 GHz.\",\"PeriodicalId\":355401,\"journal\":{\"name\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"264 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS48439.2020.9392929\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS48439.2020.9392929","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 28–37 GHz Triple-Stage Transformer-Coupled SiGe LNA with 2.5 dB Minimum NF for Low Power Wideband Phased Array Receivers
This work presents a transformer-based three-stage SiGe low-noise amplifier (LNA) implemented in the Tower Semiconductor SBC18S5 process. The design realizes wideband input matching using a T-coil network, and wideband interstage matching using coupled transformers. The LNA exhibits 20 dB gain with a 3-dB bandwidth > 9 GHz and has a minimum noise figure (NF) of 2.5 dB with 13 mW of power consumption. The LNA can also operate at 6 mW power consumption with only a 0.3 dB increase in the NF, and achieves 3 dB of gain for 1 mW of DC power consumption at 33 GHz. To the author's knowledge, this work presents one of the highest figure-of-merit (FoM) of mm-wave amplifiers with a center frequency above 30 GHz.