Broadband Reconfigurable Transceivers in SiGe

G. Flewelling
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Abstract

The focus of this paper is on our work with Broadband Reconfigurable Transceivers, mostly using SiGe processes. In general, it is difficult to design a system that can meet all needs. In some system dynamic range is critical, over certain bandwidths and frequency ranges. In others, the dynamic range may be less important, but the instantaneous bandwidth is more important. N-Path filters can provide a flexible, SWAP friendly, approach to reconfigurability in transceivers. One such custom IC is the MATRICs™ Adaptive Transceiver. The MATRICs™ V4 Adaptive Transceiver is a DC-to-40 GHz general purpose reconfigurable array of RF circuits embedded in a flexible switch fabric. Fabricated in Tower Semiconductor SBC13S4B SiGe-on-SOI BiCMOS process, the MATRICs™ Adaptive Transceiver employs SiGe HBTs for high-linearity (> + 10dBm IIP3) amplification and low phase-noise frequency generation, SOI FETs for low-loss switching, and achieves high on-chip RF isolation (>80 dB at 16 GHz) due to the high-resistivity SOI substrate, differential signalling, and chip-scale flip-chip bump packaging.
SiGe中的宽带可重构收发器
本文的重点是我们与宽带可重构收发器的工作,主要使用SiGe进程。一般来说,设计一个能满足所有需求的系统是很困难的。在某些系统中,在一定的带宽和频率范围内,动态范围是至关重要的。在其他情况下,动态范围可能不太重要,但瞬时带宽更重要。n路滤波器可以为收发器中的可重构性提供灵活的、SWAP友好的方法。其中一个这样的定制IC是matrix™自适应收发器。matrix™V4自适应收发器是一种dc至40 GHz的通用可重构RF电路阵列,嵌入在灵活的交换结构中。matrix™自适应收发器采用Tower Semiconductor SBC13S4B SiGe-on-SOI BiCMOS工艺制造,采用SiGe hbt实现高线性(> + 10dBm IIP3)放大和低相位噪声频率产生,采用SOI fet实现低损耗开关,并通过高电阻率SOI衬底、差分信号和芯片级反转芯片碰撞封装实现高片上RF隔离(> 80db, 16 GHz)。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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