GaN hemt中AM/PM非线性与源场板的关系

2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) Pub Date : 2020-11-16 DOI:10.1109/BCICTS48439.2020.9392962

S. Khandelwal, P. Hammes, M. Schmidt-Szalowski, A. Dikshit, Menno Clerk

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引用次数: 0

摘要

利用基于物理的工业标准ASM-HEMT模型分析了GaN hemt的AM/PM非线性。采用ASM-HEMT模型对商业化GaN HEMT器件进行建模。得到了精确的大信号非线性模型。然后利用该校准模型分析调幅/PM非线性。研究发现，GaN hemt的非线性源场极板电容对其AM/PM行为有很大影响。这是由于在高输出功率下，漏源电压振荡较大。大的Vds从几伏到100伏以上的摆动调制源场板区域的电荷。这导致源场极板产生的电容高度非线性，进而影响器件的AM/PM行为。

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Dependence of AM/PM non-linearity on source field-plate in GaN HEMTs

AM/PM non-linearity of GaN HEMTs is analyzed with the help of physics-based industry standard ASM-HEMT model. A commercial GaN HEMT device is modeled with ASM-HEMT model. Accurate large signal non-linear model is obtained. Next this calibrated model is used to analyze the AM/PM non-linearity. It is found that the non-linear source field-plate capacitance in GaN HEMTs has a large impact on its AM/PM behavior. This is due to the large drain-source Vds voltage swing at high output powers. Large Vds swings from few volts to above 100 V modulates the charge in source field-plate region. This causes capacitance due to the source field-plate to be highly nonlinear” in-turn affecting the AM/PM behavior of the device.

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2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)

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