M. Schröter, A. Pawlak, A. Mukherjee, D. Céli, M. Krattenmacher
{"title":"HICUM/L2:过去十年的扩展","authors":"M. Schröter, A. Pawlak, A. Mukherjee, D. Céli, M. Krattenmacher","doi":"10.1109/BCICTS48439.2020.9392954","DOIUrl":null,"url":null,"abstract":"A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detailed description in [1]. The rationales for the various extensions, their physical background and some of the code implementation peculiarities are discussed.","PeriodicalId":355401,"journal":{"name":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","volume":"204 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"HICUM/L2: Extensions over the last decade\",\"authors\":\"M. Schröter, A. Pawlak, A. Mukherjee, D. Céli, M. Krattenmacher\",\"doi\":\"10.1109/BCICTS48439.2020.9392954\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detailed description in [1]. The rationales for the various extensions, their physical background and some of the code implementation peculiarities are discussed.\",\"PeriodicalId\":355401,\"journal\":{\"name\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"volume\":\"204 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/BCICTS48439.2020.9392954\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BCICTS48439.2020.9392954","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A concise overview on the features of the most recently released version 3.0.0 of the industry standard compact bipolar transistor model HICUM/L2 is provided. The focus here is on the development of the model over the past ten years since its detailed description in [1]. The rationales for the various extensions, their physical background and some of the code implementation peculiarities are discussed.