Z. Tegegne, M. Rosales, Francesco Peressutti, J. Laheurte, C. Algani, J. Nanni, G. Tartarini, C. Viana, J. Polleux
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引用次数: 0
Abstract
This paper gives an overview on the development of microwave phototransistors within SiGe Bipolar and BiCMOS technologies. The physics and design of SiGe/Si Heterojunction Bipolar Phototransistors (HPT) are covered. A comprehensive analysis of the photodetection mechanisms and its localization into the structure is provided. After a description of the scaling rules, applications are presented in the field of Microwave-Photonics for short range and low-cost applications. Perspectives are then highlighted that includes the frequency increase, the enlargement of functionality and even on-chip optical links.