发布求助
文献互助 智能选刊 最新文献

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)最新文献

筛选
英文 中文
Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser 耦合InGaAs/GaAs多层量子点激光器的激光特性
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982126
Y. Ning, Xin Gao, Lijun Wang
{"title":"Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser","authors":"Y. Ning, Xin Gao, Lijun Wang","doi":"10.1109/ICSICT.2001.982126","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982126","url":null,"abstract":"Coupled multi-layers InGaAs/GaAs quantum dots materials were grown by MBE. The lasers were fabricated in the geometry of oxide stripes. The temperature dependence of threshold current density is measured for the lasers with different cavity lengths. The average threshold current density is as low as 48 A/cm/sup 2/, a record as we know. The laser with long cavity exhibits lasing at ground QDs state while lasing at excited quantum dot state or wetting layer state dominates the transition for lasers with shorter cavity.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129767758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
SiGe/Si HBTs with current gain of negative temperature dependence 具有负温度依赖电流增益的SiGe/Si HBTs
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981552
Zou Deshu, Xu Chen, C. Jianxin, Shi Chen, Du Jinyu, Deng Jun, Zhang Li, Shen Guangdi
{"title":"SiGe/Si HBTs with current gain of negative temperature dependence","authors":"Zou Deshu, Xu Chen, C. Jianxin, Shi Chen, Du Jinyu, Deng Jun, Zhang Li, Shen Guangdi","doi":"10.1109/ICSICT.2001.981552","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981552","url":null,"abstract":"In this paper, we analysis the basic principle of SiGe/Si HBTs, design and fabricate power transistors with current gain of negative temperature dependence. The current gain of such transistors decreases from 33 to 20, when the temperature rises from 300 K to 385 K, at the case the quiescent current, I/sub cm/, is 200 mA and V/sub ce/ is 2 V. These power HBTs are to be used in medium power amplifiers.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124713452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Development of copper CMP slurry 铜CMP浆料的研制
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981496
W. Xin, W. Hongying, L. Yuling
{"title":"Development of copper CMP slurry","authors":"W. Xin, W. Hongying, L. Yuling","doi":"10.1109/ICSICT.2001.981496","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981496","url":null,"abstract":"This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO/sub 2/) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by \"soft friction\" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren't involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al/sub 2/O/sub 3/, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130537234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A system design method of micro-g silicon accelerometer with a CMOS precision interface circuit 一种带有CMOS精密接口电路的微硅加速度计的系统设计方法
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982016
Wang Haiyong, Li Yongming, C. Hongyi
{"title":"A system design method of micro-g silicon accelerometer with a CMOS precision interface circuit","authors":"Wang Haiyong, Li Yongming, C. Hongyi","doi":"10.1109/ICSICT.2001.982016","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982016","url":null,"abstract":"In this paper, a system design method of micro-g silicon accelerometer with a CMOS precision interface circuit is presented. It contains the detail design steps in order to directing the design process, and also gives system level understand of the relation between the fabrication architecture of silicon accelerometer, which is transformed into equivalent circuit, and its interface circuit (signal detection circuit). At last, an electronics system architecture uniting the accelerometer equivalent circuit with the interface circuit that can be implemented in CMOS process is presented.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123983910","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Recursive training for multi-resolution fuzzy min-max neural network classifier 多分辨率模糊最小-最大神经网络分类器的递归训练
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981440
Chen Xi, Jin Dong-ming, Liu Zhijian
{"title":"Recursive training for multi-resolution fuzzy min-max neural network classifier","authors":"Chen Xi, Jin Dong-ming, Liu Zhijian","doi":"10.1109/ICSICT.2001.981440","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981440","url":null,"abstract":"A new training algorithm for the Fuzzy Min-Max Neural Network (FMMNN) is proposed. The FMMNN model is a powerful tool for pattern classification problems, and is perfect for hardware implementation. But the original model has several unwilling properties. Among them a serious one is how to decide the crucial training parameters. This paper proposes a recursive training algorithm to alleviate the difficulty, and improves the training procedure highly automatic. The result model is a multi-resolution combined classifier (MRCC). Experiments are made following some recent evaluation criteria known in literature, and show that compared with the original model, the MRCC has better classification performance, better adaptive learning ability and consume less computation resource.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116267323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Thermal analysis of InGaAs/AlGaAs quantum well lasers diode by atomic force microscope (AFM) 原子力显微镜(AFM)对InGaAs/AlGaAs量子阱激光器二极管的热分析
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982081
W. Guo, T. Yin, P. Lian, Y. Liu, G. Gao, Deshu Zou, G. Shen, Haoming Chen
{"title":"Thermal analysis of InGaAs/AlGaAs quantum well lasers diode by atomic force microscope (AFM)","authors":"W. Guo, T. Yin, P. Lian, Y. Liu, G. Gao, Deshu Zou, G. Shen, Haoming Chen","doi":"10.1109/ICSICT.2001.982081","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982081","url":null,"abstract":"In this paper, a 4 /spl mu/m ridge waveguide 980 nm InGaAs/AlGaAs quantum well laser diode is fabricated. It shows excellent optical and electrical characteristics. The output power is 68 mW with a threshold current of 35 mA. The far-field pattern shows fundamental transverse mode operation. Thermal properties of the diodes are presented by atomic force microscope (AFM) images. They clearly show the filling layer of SiO/sub 2/ near the ridge and that the active layer is the more thermal area in the cavity surface. The optical and electrical properties of 100 /spl mu/m wide stripe laser diodes are studied and thermal analysis is performed through the threshold current density at different operation temperatures.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116269094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electron field emission from silicon nanoprotrusions 硅纳米突起的电子场发射
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982158
M. Tabe, K. Sawada, Y. Ishikawa, M. Ishida
{"title":"Electron field emission from silicon nanoprotrusions","authors":"M. Tabe, K. Sawada, Y. Ishikawa, M. Ishida","doi":"10.1109/ICSICT.2001.982158","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982158","url":null,"abstract":"Recently, enhanced field emission of electrons from a variety of nanostructured materials such as carbon nanotubes, and porous Si has been extensively studied for application to displays and other vacuum electronic devices. In this work, we have studied field emission of electrons by using a diode experimental setup without gate electrodes from the most fundamental Si nanostructure, i.e., Si nanoprotrusions with both vertical and lateral sizes of 10/spl sim/20 nm and the density of 3/spl sim/5/spl times/10/sup 11/ cm/sup -2/. The protrusions were fabricated by our original self-organized selective oxidation technique, referred to as \"nano-LOCOS\". Although the Si protrusions were quite small, high emission current was detected at low anode voltages, depending on the microscopic shape controlled by oxidation conditions. This result encourages us to develop \"bright\" and \"highly functional\" electron emitting devices using the Si nanosystem.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121504164","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits 深亚微米MOSFET和ULSI电路的技术依赖建模
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982030
Xing Zhou, S. B. Chiah, K. Lim, Yuwen Wang, Xing Yu, S. Chwa, A. See, L. Chan
{"title":"Technology-dependent modeling of deep-submicron MOSFET's and ULSI circuits","authors":"Xing Zhou, S. B. Chiah, K. Lim, Yuwen Wang, Xing Yu, S. Chwa, A. See, L. Chan","doi":"10.1109/ICSICT.2001.982030","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982030","url":null,"abstract":"This paper presents a summary of a unified compact I/sub ds/ model for deep-submicron (DSM) MOSFET's developed from scratch over the past few years. The model covers the full range of gate-length (down to the threshold roll-off region) and biases for a given technology, which requires minimum measurement data to extract its 28 fitting parameters following a prioritized two-iteration sequence. The model has been implemented in an automated extraction program (DOUST), which can be used in aiding new technology development, and in predicting process effects on ULSI circuit performance when implemented in the circuit simulator (XSIM).","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"427 ","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114003819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs 横向非对称沟道(LAC)薄膜SOI mosfet的表征
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981564
Najeeb ud din HAKIM, M. Dunga, A. Kumar, V. Ramgopal Rao, J. Vasi
{"title":"Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs","authors":"Najeeb ud din HAKIM, M. Dunga, A. Kumar, V. Ramgopal Rao, J. Vasi","doi":"10.1109/ICSICT.2001.981564","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981564","url":null,"abstract":"This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124330386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Advances in copper metallization technology 铜金属化技术进展
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981500
C. Ting, I. Ivanov
{"title":"Advances in copper metallization technology","authors":"C. Ting, I. Ivanov","doi":"10.1109/ICSICT.2001.981500","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981500","url":null,"abstract":"Copper metallization is being established in many semiconductor device manufacture processes to replace the standard aluminum metallization. The progress in this area is very rapid. This paper describes the process flow of the new copper metallization process and also the issues related to these new processes. Recent results in copper electroplating technology, film properties, gap filling capability, barrier-seed layer, and Cu CMP will be presented. These results showed that not only are the current problems are being resolved but also the extension of this technology to future device generations looks very promising.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"155 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124356303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信