横向非对称沟道(LAC)薄膜SOI mosfet的表征

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981564

Najeeb ud din HAKIM, M. Dunga, A. Kumar, V. Ramgopal Rao, J. Vasi

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引用次数: 12

摘要

本文介绍了横向不对称沟道(LAC)薄膜绝缘体上硅(SOI) mosfet的表征结果。这些器件与具有均匀通道掺杂的传统SOI mosfet进行了比较。测量了许多通道长度、硅膜厚度和注入的倾斜角度。研究的方面包括阈值电压滚降、扭结效应、栅极诱发漏极(GIDL)和寄生双极晶体管作用。设备模拟补充了测量结果。LAC器件表现出优异的特性，与传统器件相比具有许多优点。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs

This paper presents results on the characterization of Lateral Asymmetric Channel (LAC) thin film silicon-on-insulator (SOI) MOSFETs. These devices are compared with conventional SOI MOSFETs having uniform channel doping. The measurements have been taken for a number of channel lengths, silicon film thicknesses, and tilt angles of implantation. The aspects studied include threshold voltage roll-off, kink effect, gate induced drain leakage (GIDL) and parasitic bipolar transistor action. Measurements have been supplemented by device simulations. The LAC devices show excellent characteristics, with many advantages over the conventional devices.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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