2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)最新文献_第3页

3D integrated circuit using large grain polysilicon film 采用大颗粒多晶硅薄膜的三维集成电路

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981424

V.W.C. Chan, P. Chan, M. Chan

引用次数: 4

A novel accelerometer using MOS ring oscillators 一种新型MOS环形振荡器加速度计

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982027

Zhang Zhaohua, Liu Litian

{"title":"A novel accelerometer using MOS ring oscillators","authors":"Zhang Zhaohua, Liu Litian","doi":"10.1109/ICSICT.2001.982027","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982027","url":null,"abstract":"Piezoresistive silicon accelerometers have many excellent performance characteristics such as high sensitivity, high reliability and low cost. In this paper, a novel piezoresistive silicon accelerometer using MOS ring oscillators is described and analysed. This accelerometer consists of two MOS ring oscillators, a mixer and a filter. Using a ring oscillator, the input acceleration changed into digital frequency output signal, this makes it easy to be used in digital world. The mechanical structure of this accelerometer is made up of one mass and four beams. Such structure can not only decrease cross-axis sensitivity, but also utilize the strain caused by input acceleration. Using finite-element analysis (FEA) software, we did strain simulation in order to analyse the stress distribution. The result of finite-element method simulation accorded with theory analysis very much. The MOS ring oscillator consists of an odd number of inverting gates connected in a ring and can be realized by CMOS, NMOS or PMOS circuits. The different kinds of MOS ring oscillator have different performances. Since MOS FET can realize the function of mixing frequency, the mixer is made up of MOS FET.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126266374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Manufacture of SiGe HMOSFET

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981551

Shifei Jin, C. Peiyi, Li Chen, Luo Guangli, Zhu Peiyu, H. Wentao, T. Peihsin, Liang Shurong, Zhen Yunfen, Guo Weilian

引用次数: 2

The quantum effects in MOSFET's: threshold voltage creep MOSFET的量子效应:阈值电压蠕变

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982040

Wu-yun Quan, D.M. Kim

引用次数: 1

MEMS technology for biomedical applications 生物医学应用的MEMS技术

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981417

D. Polla

引用次数: 18

Low phase noise and high output power VCO design for a fully integrated GSM RF transceiver 全集成GSM射频收发器的低相位噪声和高输出功率压控振荡器设计

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981461

L.B. Li

引用次数: 1

Electrical characteristics of a new lateral trench electrode IGBT for smart power IC 智能电源集成电路用新型侧沟电极IGBT的电学特性

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981439

E. Kang, S. Moon, M. Sung

引用次数: 0

New global insight in ultra-thin oxide reliability using accurate experimental methodology and theoretical modeling 使用精确的实验方法和理论建模的超薄氧化物可靠性的新全球见解

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982071

E. Wu, J. Suñé

{"title":"New global insight in ultra-thin oxide reliability using accurate experimental methodology and theoretical modeling","authors":"E. Wu, J. Suñé","doi":"10.1109/ICSICT.2001.982071","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982071","url":null,"abstract":"We critically examine several important aspects concerning ultra-thin oxide reliability. Time- or charge-to-breakdown (T/sub BD//Q/sub BD/) measurements with high statistical accuracy are carried out over a wide range of oxide thickness (T/sub ox/), voltages, temperatures, and test structures. Thickness dependence of Weibull slopes and its physical interpretation based on a simple analytic model are reviewed. We also investigate the voltage-dependent voltage acceleration using two independent experimental methods of long-term module stress and area scaling techniques. In the context of voltage-dependent voltage acceleration, we resolve various seemingly contradicting and confusing observations such as the strong temperature dependence of oxide breakdown observed on ultra-thin oxides, temperature-independent voltage acceleration at a fixed T/sub BD/, and non-Arrhenius temperature dependence found on ultra-thin oxides. Using a newly developed kinetic approach for oxide breakdown, we propose a two-step hydrogen model as an alternative to explain the experimental observations on voltage-dependent voltage acceleration and temperature dependence of oxide breakdown.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"317 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115808362","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A high-endurance 96-Kbit FeRAM embedded in a smart card LSI using Ir/IrO2/PZT(MOCVD)/Ir ferroelectric capacitors 采用Ir/IrO2/PZT(MOCVD)/Ir铁电电容器嵌入智能卡LSI的高耐用性96 kbit FeRAM

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981454

H. Mori, N. Tanabe, A. Seike, H. Takeuchi, J. Yamada, T. Miwa, H. Koike, Y. Maejima, T. Tatsumi, S. Kobayashi, T. Nakura, H. Sugiyama, N. Kasai, T. Hase, H. Hada, H. Toyoshima

引用次数: 3

1 /spl mu/m CMOS programmable surface acoustic wave filter integrated circuit 1 /spl μ m CMOS可编程表面声波滤波集成电路

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982095

Ying Chen, Dazhong Zhu, Yuan-Chuan Wang

引用次数: 0