MOSFET的量子效应:阈值电压蠕变

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982040

Wu-yun Quan, D.M. Kim

{"title":"MOSFET的量子效应:阈值电压蠕变","authors":"Wu-yun Quan, D.M. Kim","doi":"10.1109/ICSICT.2001.982040","DOIUrl":null,"url":null,"abstract":"The phenomenon that the inversion charge is sublinear to gate voltage is presented and modeled via V/sub TH/-creep. V/sub TH/-creep can be as large as 50% of the onset threshold voltage, showing its importance in modeling the I-V characteristics of MOSFETs.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The quantum effects in MOSFET's: threshold voltage creep\",\"authors\":\"Wu-yun Quan, D.M. Kim\",\"doi\":\"10.1109/ICSICT.2001.982040\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The phenomenon that the inversion charge is sublinear to gate voltage is presented and modeled via V/sub TH/-creep. V/sub TH/-creep can be as large as 50% of the onset threshold voltage, showing its importance in modeling the I-V characteristics of MOSFETs.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"25 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.982040\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.982040","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

提出了逆变电荷与栅极电压呈亚线性关系的现象，并通过V/sub - TH/-蠕变建模。V/sub - TH/-蠕变可以高达起始阈值电压的50%，这表明了它在模拟mosfet的I-V特性中的重要性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

The quantum effects in MOSFET's: threshold voltage creep

The phenomenon that the inversion charge is sublinear to gate voltage is presented and modeled via V/sub TH/-creep. V/sub TH/-creep can be as large as 50% of the onset threshold voltage, showing its importance in modeling the I-V characteristics of MOSFETs.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

自引率

0.00%

发文量