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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)最新文献

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Plasma charging damage in deep-submicron CMOS technology and beyond 深亚微米CMOS技术及以后的等离子体充电损伤
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981484
K.P. Cheung
{"title":"Plasma charging damage in deep-submicron CMOS technology and beyond","authors":"K.P. Cheung","doi":"10.1109/ICSICT.2001.981484","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981484","url":null,"abstract":"Plasma charging damage in CMOS technology is reviewed. The gate-oxide thickness dependent sensitivity to charging damage is examined. Ultra thin gate-oxide can tolerate low to moderate charging stress at room temperature better than thicker oxide, but not at elevated temperature. When the charging stress level is high, gate-oxide reliability degradation will result regardless the stress temperature. When high-k dielectric replaces SiO/sub 2/ as gate-dielectric, plasma charging damage should become very severe again.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131584623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Study of a novel silicon micromachined gyroscope 新型硅微机械陀螺仪的研究
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982002
B. Xiong, Yuelin Wang, X. Huang, Lufeng Che, Weiyuan Wang
{"title":"Study of a novel silicon micromachined gyroscope","authors":"B. Xiong, Yuelin Wang, X. Huang, Lufeng Che, Weiyuan Wang","doi":"10.1109/ICSICT.2001.982002","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982002","url":null,"abstract":"A novel gyroscope with the same Q-factor of detecting mode and driving mode was designed. The device structure which we called \"fence gyro\" consists of a proof mass with bats linked up to substrate by suspending springs. The calculated result shows that the device has its Q-factor of detecting mode and driving mode in almost same order of 140 at atmospheric pressure. The devices are fabricated by silicon-glass wafer bonding and deep reactive ion etching technology.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126598242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of a PZT based cantilever structure 基于压电陶瓷的悬臂结构设计
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982013
T. Ren, Lin-Tao Zhang, Jianshe Liu, Litian Liu, Zhijian Li
{"title":"Design of a PZT based cantilever structure","authors":"T. Ren, Lin-Tao Zhang, Jianshe Liu, Litian Liu, Zhijian Li","doi":"10.1109/ICSICT.2001.982013","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982013","url":null,"abstract":"A PZT-based cantilever structure for microphone and microspeaker applications is designed using a multimorph model. The use of zirconate titanate (PZT) greatly improves the characteristics of the microphone and microspeaker. The sensitivity and the sound pressure level (SPL) of the integrated microphone and microspeaker are calculated. It is found that the sensitivity of the microphone and the SPL of the microspeaker are higher than those using normal piezoelectric materials.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130773720","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Experimental verification of the principle of operation of Si and SiGe resistor load flip-flop and Si resistor load ring oscillator of n channel vertical dual carrier field effect transistor 实验验证了n通道垂直双载流子场效应晶体管的Si和SiGe电阻负载触发器和Si电阻负载环振荡器的工作原理
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981539
G.H. Li, F.Z. Yan, D. Han, C.Z. Ji, D.S. Zou, P. Xu, Y.H. Yang, C. Huang, D. Huang
{"title":"Experimental verification of the principle of operation of Si and SiGe resistor load flip-flop and Si resistor load ring oscillator of n channel vertical dual carrier field effect transistor","authors":"G.H. Li, F.Z. Yan, D. Han, C.Z. Ji, D.S. Zou, P. Xu, Y.H. Yang, C. Huang, D. Huang","doi":"10.1109/ICSICT.2001.981539","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981539","url":null,"abstract":"The principle of operation of Si and SiGe resistor load flip flops and Si resistor load ring oscillators of n channel vertical dual carrier field effect transistors are reviewed. Measured data from experimental verification of the principle of operation is presented.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130842894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Study on resonant tunneling diode 谐振隧道二极管的研究
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982164
Guo Weilian, Niu Pingjuan, Liang Hui-lai, Zhang Shilin
{"title":"Study on resonant tunneling diode","authors":"Guo Weilian, Niu Pingjuan, Liang Hui-lai, Zhang Shilin","doi":"10.1109/ICSICT.2001.982164","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982164","url":null,"abstract":"We designed and fabricated an AlAs/GaAs/InGaAs/GaAs/AlAs Resonant Tunneling Diode (RTD) with two types of epitaxial structures grown by Molecular Beam Epitaxy (MBE). The devices have shown excellent I-V characteristics with peak-valley current ratio (PVCR) 5:1 at room temperature and a high peak current density. The DC and AC characterizations are reported and analyzed.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133664423","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Polylithic integration of SAW devices using quartz-on-silicon process for true single chip radio 使用石英硅片工艺的SAW器件的多片集成，用于真正的单芯片无线电
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981463
Yeonwoo Ku, Y. Eo, K. Lee
{"title":"Polylithic integration of SAW devices using quartz-on-silicon process for true single chip radio","authors":"Yeonwoo Ku, Y. Eo, K. Lee","doi":"10.1109/ICSICT.2001.981463","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981463","url":null,"abstract":"Presents the performance of DTCSO (digitally temperature-compensated SAW oscillator) using PLIC (polylithic integrated circuit) technology on quartz-on-silicon wafer. A prototype DTCSO reference oscillator is designed and fabricated on a QoS wafer and shows the phase noise performance -115 dBc/Hz at 10 kHz offset, 7.5 mW power consumption. The frequency stability performance of 4.5 ppm is very comparable with that of bulk crystal TCXO, demonstrating the feasibility of integration of reference oscillator for high performance true single chip radio.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133730936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Measurement and simulation of IM distortion in high mobility transistors 高迁移率晶体管中IM失真的测量与仿真
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982149
G. Qu, A. Parker
{"title":"Measurement and simulation of IM distortion in high mobility transistors","authors":"G. Qu, A. Parker","doi":"10.1109/ICSICT.2001.982149","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982149","url":null,"abstract":"This paper reports the characterisation of intermodulation (IM) distortion in high electron mobility transistors (HEMTs). The second- and third-order IM products in HEMT common-source amplifiers are measured and simulated comprehensively. The comparison of measured and simulated IM products as a function of gate-source voltage, drain-source voltage, input level as well as load impedance are reported. Excellent agreement between measurements and simulations is achieved.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115750300","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The Schottky characteristics of Ti/n-GaAs surface-treated by N/sub 2/ plasma N/sub /等离子体处理Ti/ N - gaas表面的肖特基特性
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.982083
Yu-Long Jiang, G. Ru, F. Lu, Bingzong Li, Wei Li, Ai-Zhen Li
{"title":"The Schottky characteristics of Ti/n-GaAs surface-treated by N/sub 2/ plasma","authors":"Yu-Long Jiang, G. Ru, F. Lu, Bingzong Li, Wei Li, Ai-Zhen Li","doi":"10.1109/ICSICT.2001.982083","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.982083","url":null,"abstract":"The Schottky characteristics of Ti contacts on n-GaAs surface-treated by N/sub 2/ plasma at different temperature are studied. The capacitance-voltage (C-V) characteristic of the samples surface-treated by N/sub 2/ plasma is far more ideal than that of the pure GaAs samples. The Schottky characteristic of the samples surface-treated at 350/spl deg/C is better than that of samples treated at 950/spl deg/C. In this article, the zero-bias Schottky barrier height (SBH) /spl Phi//sub b0/, the flat-band SBH /spl Phi//sub b//sup 0/, the thickness of the interfacial layer /spl delta/, the permittivity of the interfacial layer /spl epsiv//sub i/ and the ideality factor n of the samples at different nitridation temperature are extracted from the forward, reverse current-voltage (I-V) and the C-V measurement, respectively. Also the distribution of interface states density is qualitatively determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115765759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Backend process for cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor for future DRAM 用于未来DRAM的圆柱形Ru/Ta/sub 2/O/sub 5//Ru电容器的后端工艺
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981452
J. Lin, T. Suzuki, H. Minakata, A. Shimada, K. Tsunoda, M. Fukuda, T. Kurahashi, Y. Fukuzumi, A. Hatada, A. Sato, P. Sun, Y. Ishibashi, H. Tomita, N. Nishikawa, E. Ito, W. Liu, C. M. Chu, R. Suzuki, M. Nakabayashi, D. Matsunaga, K. Hieda, K. Hashimoto, S. Nakamura, Y. Kohyama, C. Shiah
{"title":"Backend process for cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor for future DRAM","authors":"J. Lin, T. Suzuki, H. Minakata, A. Shimada, K. Tsunoda, M. Fukuda, T. Kurahashi, Y. Fukuzumi, A. Hatada, A. Sato, P. Sun, Y. Ishibashi, H. Tomita, N. Nishikawa, E. Ito, W. Liu, C. M. Chu, R. Suzuki, M. Nakabayashi, D. Matsunaga, K. Hieda, K. Hashimoto, S. Nakamura, Y. Kohyama, C. Shiah","doi":"10.1109/ICSICT.2001.981452","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981452","url":null,"abstract":"A novel backend process is developed for the cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor for 130 nm generation DRAMs to achieve good electrical characteristics. Forming gas (3%H/sub 2//97%N/sub 2/) anneal (FGA) induced degradation can be effectively suppressed. For the cylindrical Ru/Ta/sub 2/O/sub 5//Ru capacitor with full backend processes, including passivation layer formation and a FGA, the cell leakage current and cell capacitance are 1 fA (at /spl plusmn/0.8 V at 85/spl deg/C) and 15fF, respectively.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117065630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Current transport mechanisms of Ge/sub 1-y/C/sub y//Si heterojunction diodes Ge/sub - 1-y/C/sub -y/ /Si异质结二极管的电流输运机制
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI: 10.1109/ICSICT.2001.981548
F. Chen, J. Kolodzey
{"title":"Current transport mechanisms of Ge/sub 1-y/C/sub y//Si heterojunction diodes","authors":"F. Chen, J. Kolodzey","doi":"10.1109/ICSICT.2001.981548","DOIUrl":"https://doi.org/10.1109/ICSICT.2001.981548","url":null,"abstract":"Alloys of group IV semiconductors have attracted more and more attention recently as a material for use in the development of Si-based heterostructure devices. In this paper, the current transport mechanisms of relaxed p-type Ge/sub 1-y/C/sub y/ alloy films on n-type Si at both forward and reverse bias were studied. The current transport is dominated by combined thermal injection, defect tunneling, and recombination mechanisms. The presence of carbon reduces interface states, decreases the leakage current, and increases forward turn-on voltage. This paper demonstrates the benefits of alloying C into Ge and the promising characteristics of Ge/sub 1-y/C/sub y//Si heterostructure devices for future electronic and optoelectronic applications.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"31 11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123416405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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