具有负温度依赖电流增益的SiGe/Si HBTs

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.981552

Zou Deshu, Xu Chen, C. Jianxin, Shi Chen, Du Jinyu, Deng Jun, Zhang Li, Shen Guangdi

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引用次数: 5

摘要

在本文中，我们分析了SiGe/Si HBTs的基本原理，设计并制作了具有负温度依赖电流增益的功率晶体管。在静态电流I/sub cm/为200 mA, V/sub ce/为2 V的情况下，当温度从300 K上升到385 K时，晶体管的电流增益从33减小到20。这些功率hbt将用于中功率放大器。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe/Si HBTs with current gain of negative temperature dependence

In this paper, we analysis the basic principle of SiGe/Si HBTs, design and fabricate power transistors with current gain of negative temperature dependence. The current gain of such transistors decreases from 33 to 20, when the temperature rises from 300 K to 385 K, at the case the quiescent current, I/sub cm/, is 200 mA and V/sub ce/ is 2 V. These power HBTs are to be used in medium power amplifiers.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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