{"title":"铜CMP浆料的研制","authors":"W. Xin, W. Hongying, L. Yuling","doi":"10.1109/ICSICT.2001.981496","DOIUrl":null,"url":null,"abstract":"This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO/sub 2/) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by \"soft friction\" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren't involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al/sub 2/O/sub 3/, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright.","PeriodicalId":349087,"journal":{"name":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Development of copper CMP slurry\",\"authors\":\"W. Xin, W. Hongying, L. Yuling\",\"doi\":\"10.1109/ICSICT.2001.981496\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO/sub 2/) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by \\\"soft friction\\\" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren't involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al/sub 2/O/sub 3/, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright.\",\"PeriodicalId\":349087,\"journal\":{\"name\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSICT.2001.981496\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSICT.2001.981496","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper presents a formulation of slurry for Cu CMP, in which colloidal silica (SiO/sub 2/) was used as the abrasive particles. Since Cu is chemically active we tried to planarize Cu by "soft friction" using colloidal silica (size of 20nm), with the selected oxidizer in which metal ions aren't involved, and organic amine is used as the complex agent. Silicon sol (size of 20nm) is softer than Al/sub 2/O/sub 3/, has no contamination, and better dispersity and suspension with little scratching. Moreover, adding non-metal ions to the chelate can compress contamination of metal ions and adsorption of particles, so that the surface is smooth and bright.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
