耦合InGaAs/GaAs多层量子点激光器的激光特性

2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443) Pub Date : 2001-10-22 DOI:10.1109/ICSICT.2001.982126

Y. Ning, Xin Gao, Lijun Wang

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引用次数: 1

摘要

采用MBE法制备了多层InGaAs/GaAs量子点材料。激光器是按照氧化条纹的几何形状制造的。测量了不同腔长激光器阈值电流密度对温度的依赖关系。平均阈值电流密度低至48 A/cm/sup 2/，这是我们所知道的记录。长腔激光器表现为基态量子点态的激光，短腔激光器表现为激发量子点态或湿层态的激光。

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Lasing characteristics of coupled InGaAs/GaAs multi-layers quantum dots laser

Coupled multi-layers InGaAs/GaAs quantum dots materials were grown by MBE. The lasers were fabricated in the geometry of oxide stripes. The temperature dependence of threshold current density is measured for the lasers with different cavity lengths. The average threshold current density is as low as 48 A/cm/sup 2/, a record as we know. The laser with long cavity exhibits lasing at ground QDs state while lasing at excited quantum dot state or wetting layer state dominates the transition for lasers with shorter cavity.

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2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)

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