{"title":"A 1.8 V single-inductor dual-output switching converter for power reduction techniques","authors":"D. Ma, W. Ki, C. Tsui, P. Mok","doi":"10.1109/VLSIC.2001.934219","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934219","url":null,"abstract":"A 1.8 V integrated single-inductor dual-output boost converter is presented. This converter adopts a time-multiplexing control in providing two independent supply voltages using only one 1 /spl mu/H off-chip inductor. The topology could easily be extended to give multiple outputs. The converter is fabricated with a standard 0.5 /spl mu/m CMOS n-well process. At an oscillator frequency of 1 MHz, the conversion efficiency reaches 88% at a total output power of 350 mW.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126102140","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A variable gain IF amplifier with -67 dBc IM/sub 3/-distortion at 1.4 V/sub pp/ output in 0.25 /spl mu/m CMOS","authors":"K. Philips, E. Dijkmans","doi":"10.1109/VLSIC.2001.934202","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934202","url":null,"abstract":"A variable gain amplifier based on feedback has IM/sub 3/-products below -67 dBc around the 10.7 MHz IF of an AM/FM radio receiver. It consumes 2.7 mA from a 2.5 V supply delivering a differential output signal of 1.4 V/sub pp/ with 96 dB dynamic range in a 9 kHz AM channel. The active area is 0.038 mm/sup 2/ in 0.25 /spl mu/m CMOS.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125397181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"A 66-400 MHz, adaptive-lock-mode DLL circuit with duty-cycle error correction [for SDRAMs]","authors":"Y. Okuda, M. Horiguchi, Y. Nakagome","doi":"10.1109/VLSIC.2001.934188","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934188","url":null,"abstract":"A DLL circuit featuring variable \"lock mode\" and correction of duty-cycle error is described. The DLL circuit has a wide locking range from under 66 MHz to 400 MHz. The chip area and power consumption at 400 MHz are 0.33 mm/sup 2/ and 24 mW, respectively.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122774938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
S. Narendra, J. Tschanz, A. Keshavarzi, S. Borkar, V. De
{"title":"Comparative performance, leakage power and switching power of circuits in 150 nm PD-SOI and bulk technologies including impact of SOI history effect","authors":"S. Narendra, J. Tschanz, A. Keshavarzi, S. Borkar, V. De","doi":"10.1109/VLSIC.2001.934244","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934244","url":null,"abstract":"History effect measurements on different circuits in a 150 nm SOI technology show no adverse impact on worst-case delay vs. leakage trade-offs. The performance advantage of SOI over bulk is shown to come mostly from capacitance reduction. Hence, it will diminish with technology scaling.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129562026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"An SOI CMOS LVDS driver and receiver pair","authors":"Brian Young","doi":"10.1109/VLSIC.2001.934224","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934224","url":null,"abstract":"A low-voltage differential signaling (LVDS) driver and receiver pair utilizing source-body-tied silicon-on-insulator CMOS transistors is shown to operate at 1 Gb/s data rates with zero bit error rate using a 2/sup 31/-1 pseudo-random bit sequence. For the driver, a level-shifter with gate voltage protection transitions from thin oxide core transistors to DGO output transistors was used. The receiver uses parallel PFET and NFET dual gate oxide transistors to enable common-mode input from 0-2.4 V.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121643878","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Low power motion compensation block IP with embedded DRAM macro for portable multimedia applications","authors":"Chi-Weon Yoon, Jeonghoon Kook, Ramchan Woo, Se-Joong Lee, Kangmin Lee, H. Yoo","doi":"10.1109/VLSIC.2001.934207","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934207","url":null,"abstract":"A 16.3 mW low power motion compensation (MC) block IP with 1.25 Mbit embedded DRAM macro is implemented using 0.18 /spl mu/m EML technology for portable video applications. For low power consumption, its frequency is lowered to 20 MHz by utilizing parallelism in datapath. Embedded DRAM frame buffer eliminates external data I/O. In addition, distributed nine-tiled mapping (DNTM) with partial activation scheme reduces power for accessing the frame buffer up to 31% compared to conventional 1-bank tiled mapping. Adaptive fetch control (AFC) in data buffer reduces power up to 29% by eliminating unnecessary switching in datapath.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125834522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Morimura, S. Shigematsu, T. Shimamura, K. Machida, I. Kyuragi
{"title":"A pixel-level automatic calibration circuit scheme for sensing initialization of a capacitive fingerprint sensor LSI","authors":"H. Morimura, S. Shigematsu, T. Shimamura, K. Machida, I. Kyuragi","doi":"10.1109/VLSIC.2001.934229","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934229","url":null,"abstract":"We propose a pixel-level automatic calibration circuit scheme that initializes a capacitive fingerprint sensor LSI to eliminate the influence of the surface condition, which is degraded by dirt during practical use. The calibration is executed by adjusting the variable capacitance in each pixel to make the sensed signals of all pixels the same. A fingerprint sensor LSI using the 0.5-/spl mu/m CMOS process/sensor process demonstrates that clear fingerprint images are always obtained by the scheme though the surface condition degrades. The proposed scheme ensures consistent clear image capture during long-term usage.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128477120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Single-electron pass-transistor logic and its application to a binary adder","authors":"Y. Ono, Y. Takahashi","doi":"10.1109/VLSIC.2001.934196","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934196","url":null,"abstract":"A new type of logic for constructing single-electron transistor (SET) circuits is proposed. The logic uses multigate SETs as pass transistors. The pass signals are routed with a small voltage so that the SETs can utilize Coulomb blockade effects. They are boosted at the output node when transferred to the input gates of other circuits. Since the multigate configuration enables us to implement XOR function using just one device, the logic can express sum- and carry-bits of an adder in a compact way. We have fabricated an elemental circuit of the logic and tested the basic operation of the SETs in the circuit. We also describe a multibit binary adder based on the logic, and discuss the circuit size and speed.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"90 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128529766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Kuppuswamy, K. Callahan, Keng L. Wong, D. Ratchen, G. Taylor
{"title":"On-die clock jitter detector for high speed microprocessors","authors":"R. Kuppuswamy, K. Callahan, Keng L. Wong, D. Ratchen, G. Taylor","doi":"10.1109/VLSIC.2001.934233","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934233","url":null,"abstract":"An on-die clock jitter detector has been designed for high speed microprocessor circuits and fabricated in 0.18 /spl mu/m CMOS technology. Variation of internal clock high/low time or period has been recorded. Innovative circuit techniques are used to provide fast initial DLL lock, adaptive filtering, granular jitter computation, and enhanced immunity to power-supply noise. It compares individual clock cycles to the average clock period, reporting the differences. The system has multiple output modes to allow more complete understanding of the jitter distribution and time dependence.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128678965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
H. Notani, M. Koyama, R. Mano, H. Makjno, Y. Matsuda
{"title":"A 0.9-/spl mu/A standby current DSP core using improved ABC-MT-CMOS with charge pump circuit","authors":"H. Notani, M. Koyama, R. Mano, H. Makjno, Y. Matsuda","doi":"10.1109/VLSIC.2001.934246","DOIUrl":"https://doi.org/10.1109/VLSIC.2001.934246","url":null,"abstract":"A 64-bit 80-MHz multimedia DSP core has been designed using 0.15-/spl mu/m CMOS technology. An improved Auto-Backgate-Controlled MT-CMOS (ABC-MT-CMOS) circuit with a charge pump is adopted to suppress the standby leakage current. The dynamic active current of the whole chip was simulated to optimize the size of the switch for the power supply control. The DSP core chip, which integrated 300 kgate logic, 64-kbyte SRAM and charge pump circuit, has only 0.9-/spl mu/A standby leakage current.","PeriodicalId":346869,"journal":{"name":"2001 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.01CH37185)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2001-06-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131056970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}