2016 International Conference on Electronics Packaging (ICEP)最新文献

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Neural networks IC for locomotion rhythm generator emulating living organism 模拟生物体运动节律发生器的神经网络集成电路
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486863
D. Tanaka, K. Sugita, Yuxuan Han, M. Takato, F. Uchikoba, Ken Saito
{"title":"Neural networks IC for locomotion rhythm generator emulating living organism","authors":"D. Tanaka, K. Sugita, Yuxuan Han, M. Takato, F. Uchikoba, Ken Saito","doi":"10.1109/ICEP.2016.7486863","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486863","url":null,"abstract":"Living organisms has the excellent locomotion controller by using biological neural networks. Therefore, many researchers have been emulated the biological neural networks for applying similar control to small size robots. We are studying artificial neural networks for the purpose of controlling a small size robot without using software programs. Previously, we have constructed two types of insect type microrobot which could locomote by using their legs. The microrobot could locomote by using a link mechanism with a minimum number of small size actuators. In this paper, we will discuss a neural networks integrated circuit (IC) which can generate the locomotion rhythms for the microrobot. The neural networks IC consists of the pulse-type hardware neuron model which can generate oscillating electrical activity. In addition, we construct the locomotion rhythm generator using neural networks IC and peripheral circuits to generate the driving waveform for the actuator. Neural networks IC and peripheral circuits are mounted on the small size circuit board. As a result, our constructed locomotion rhythm generator can generate the driving waveform to locomote the microrobot without using software programs.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"929 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123060907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Bi additions on the distinct βSn grain structure of Sn-0.7Cu-0.05Ni-xBi (x = 0–4wt%) Bi添加对Sn-0.7Cu-0.05Ni-xBi (x = 0-4wt %)明显βSn晶粒结构的影响
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486816
S. Belyakov, T. Nishimura, K. Sweatman, K. Nogita, C. Gourlay
{"title":"Influence of Bi additions on the distinct βSn grain structure of Sn-0.7Cu-0.05Ni-xBi (x = 0–4wt%)","authors":"S. Belyakov, T. Nishimura, K. Sweatman, K. Nogita, C. Gourlay","doi":"10.1109/ICEP.2016.7486816","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486816","url":null,"abstract":"Effects of Bi additions to Ag-containing lead-free solders have been the focus of a considerable amount of past investigation. However, the influence of Bi on Sn-Cu-Ni solders has not been studied extensively. In the present study, we explore the influence of Bi on microstructure formation of Sn-0.7Cu-0.05Ni/Cu solder joints both in the bulk and at the interface. It is shown that (i) Sn-0.7Cu-0.05Ni solidifies to produce a markedly different grain structure to Ag-containing lead-free alloys, with 5-8 independent βSn grains in each joint; (ii) Bi additions to Sn-0.7Cu-0.05Ni maintain this distinct βSn grain structure and had no discernible effect on the (Cu,Ni)6Sn5 interfacial intermetallic layers or primary intermetallic crystals.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124894063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Study of dye sensitized solar cell application of TiO2 films by atmospheric pressure plasma deposition method 常压等离子沉积法制备TiO2薄膜在染料敏化太阳能电池中的应用研究
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486914
W. Chou, Wen-Jen Liu
{"title":"Study of dye sensitized solar cell application of TiO2 films by atmospheric pressure plasma deposition method","authors":"W. Chou, Wen-Jen Liu","doi":"10.1109/ICEP.2016.7486914","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486914","url":null,"abstract":"Self-developed, low-cost and convenient-operation atmospheric plasma system was used to perform titanium oxide films deposition, and the application of DSSCs was also assessed. Inorganic precursor (titanium tetraisopropoxide, TTIP) was used to form TiO2 films, and the effects of the deposition times on the characteristic and microstructure had been investigated. Moreover, the system was used to study the core deposition technology of high specific surface area and well-aligned TiO2 nano-dendrites (TNDs) films served as photo-anode for the DSSCs applications. Up to date, the optimal TNDs films with an extra high deposition rate of ~2μm/min revealed the best photo-conversion efficiency of 12.08% for adopting N719 dye and iodine ion electrolyte, under illumination of simulated AM1.5 solar light (100 mWcm-2). In this study, the films synthesized using optimum process parameters with a high specific surface area and well-aligned TNDs morphology can significantly improve the photo-conversion efficiency.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123273646","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Investigation of connecting techniques for high temperature application on power modules 大功率模块高温应用连接技术研究
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486851
F. Kawashiro, Yoshiki Endo, Tatsuo Tonedachi, H. Nishikawa
{"title":"Investigation of connecting techniques for high temperature application on power modules","authors":"F. Kawashiro, Yoshiki Endo, Tatsuo Tonedachi, H. Nishikawa","doi":"10.1109/ICEP.2016.7486851","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486851","url":null,"abstract":"Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be developed to meet higher temperature and higher power cycle durability requirements. In order to meet these requirements, in the present study, we propose Cu wire, Cu ribbon and Cu connector between Cu wirings of the substrates and investigate their feasibilities, including electrical resistances, footprints of bonding area, and bonding reliability under accelerated stress test, respectively.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"119 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128540922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of dye sensitized solar cell application of TiO2 nanostructured films synthesis by hydrothermal process 水热法合成TiO2纳米膜在染料敏化太阳能电池中的应用研究
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486915
Ming-Hung Chung, Wen-Jen Liu
{"title":"Study of dye sensitized solar cell application of TiO2 nanostructured films synthesis by hydrothermal process","authors":"Ming-Hung Chung, Wen-Jen Liu","doi":"10.1109/ICEP.2016.7486915","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486915","url":null,"abstract":"The purpose of this work is to use a hydrothermal process to synthesize titanium dioxide (TiO2) nano-rods (TNRs) film on 15 mm×15 mm size of fluorine doped tin oxide (FTO) conductive glass as the photo-anodes of dye-sensitized solar cells (DSSCs). A TiO2 seed layer with anatase structure was deposited on a fluorine doped tin oxide (FTO) coated glass substrate by spin coating. 1.75g potassium titanium oxalate (K2TiO(C2O4)2) was added to the mixture solvent of 100mL containing de-ionized (DI) water and diethylene glycol (DEG), and vigorously stirred for 30 min. The hydrothermal synthesis was conducted at 180 °C for 9 h for the growth of the TiO2 nanowire arrays. N719 dyes as well as the iodine ions electrolyte were served as the dye-sensitized solar cell (DSSC) components, and the DSSC devices were analyzed by I-V meters to determine the photo-conversion efficiency. Up to date, the optimal TNRs films revealed the best photo-conversion efficiency of 5.96% under illumination of simulated AM1.5 solar light (100 mWcm-2). In this study, the films synthesized using optimum process parameters with a high specific surface area and well-aligned TNRs morphology can significantly improve the photo-conversion efficiency.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128643890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Direct electrode patterning on layered GaN on sapphire substrate by using needle-type dispenser system of Ag nanoinks 用针型银纳米油墨分点系统在蓝宝石衬底上制备层状氮化镓的直接电极图案
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486796
Y. Kashiwagi, M. Saitoh, T. Hasegawa, K. Matsukawa, T. Shigemune, A. Koizumi, T. Kojima, Y. Fujiwara, H. Kakiuchi, N. Aoyagi, Y. Yoshida, M. Nakamoto
{"title":"Direct electrode patterning on layered GaN on sapphire substrate by using needle-type dispenser system of Ag nanoinks","authors":"Y. Kashiwagi, M. Saitoh, T. Hasegawa, K. Matsukawa, T. Shigemune, A. Koizumi, T. Kojima, Y. Fujiwara, H. Kakiuchi, N. Aoyagi, Y. Yoshida, M. Nakamoto","doi":"10.1109/ICEP.2016.7486796","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486796","url":null,"abstract":"Ag electrodes were formed on InGaN/GaN multi-quantum well blue light emitting diode (LED) substrates by using needle-type dispensing of Ag nanoink and the heat treatment as wet processes. The patterns by using the needle-type dispenser system are drawn out of a dot matrix method like an inkjet printer, and thus, arbitrary graphics can be produced. After patterning, the conductive Ag films as electrodes were formed by sintering at 450°C for 30 minutes under the atmospheric conditions. The fabricated LED emitted blue light with a threshold and operating voltage of 3.3 and 4.4 V, respectively. These results suggest that the wet processed Ag electrodes have a potential for use in the production of GaN based LEDs.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127771636","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Back-via 3D integration technologies by temporary bonding with thermoplastic adhesives and visible-laser debonding 背部-通过三维集成技术,通过热塑性粘合剂和可见激光脱粘临时粘合
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486825
M. Murugesan, T. Fukushima, J. Bea, H. Hashimoto, Sang Hern Lee, Mizuki Motoyoshi, Tetsu Tanaka, K. Lee, M. Koyanagi
{"title":"Back-via 3D integration technologies by temporary bonding with thermoplastic adhesives and visible-laser debonding","authors":"M. Murugesan, T. Fukushima, J. Bea, H. Hashimoto, Sang Hern Lee, Mizuki Motoyoshi, Tetsu Tanaka, K. Lee, M. Koyanagi","doi":"10.1109/ICEP.2016.7486825","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486825","url":null,"abstract":"Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues were left on the thinned wafer surface owing to their excellent solubility in solvents. The edge-trimming width and depth for Si before temporary bonding and the temporary bonding parameters using thermo-plastic adhesives were carefully investigated and optimized, in order to avoid any undesirable effects in background thin wafers. Through-Si-Vias with a diameter of 5-15 μm were formed by masking the via patterns (using i-line, back-side-alignment) on the SiO2 surface of the back-ground side of 30 - 50 μm-thick LSI wafer that was temporarily bonded to the support glass, followed by selective deep-reactive-ion-etching of SiO2, Si, and bottom SiO2, and subsequently barrier and seed layers deposition and via filling. Using laser debonding technique, the thinned Si wafers with Cu-vias were transferred to the other glass with different temporary adhesive. The observed low resistance values from the I-V data for 5000 Cu-via daisy chain reveals that the proposed back-via 3D integration using laser debonding is now ready for industrial use.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116817253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of electromagnetic induction type MEMS motor with multilayer ceramic three-dimensional coil 多层陶瓷三维线圈电磁感应式MEMS电机的设计
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486859
M. Takato, Y. Yokozeki, K. Mishima, Y. Han, K. Saito, F. Uchikoba
{"title":"Design of electromagnetic induction type MEMS motor with multilayer ceramic three-dimensional coil","authors":"M. Takato, Y. Yokozeki, K. Mishima, Y. Han, K. Saito, F. Uchikoba","doi":"10.1109/ICEP.2016.7486859","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486859","url":null,"abstract":"This paper proposes an electromagnetic induction type MEMS (Micro Electro Mechanical Systems) motor. The developed MEMS motor is combined the MEMS process and the multilayer ceramic technology. The MEMS process forms the silicon miniature components for a structural part. The multilayer ceramic technology fabricates a miniature ceramic magnetic circuit. This technology is possible to realize a miniature three-dimensional coil with a magnetic core. The fabricated MEMS motor has diameter of 4.22 mm and height of 6.04 mm, respectively. The dimension error of the silicon components is less than ±5 micro meter. The fabricated miniature three-dimensional coil has 50 turns, and dimensions of the long side, short side and height are 3.07 mm, 1.85 mm and 2.5 mm, respectively. The combined MEMS motor demonstrates the rotational motion at an input voltage of 0.25 V with a frequency of 18 Hz. The rotational speed is 1080 rpm. By these results, the miniature electromagnetic induction type MEMS motor is achieved. In the future work, the MEMS motor that has the bearing structure and the deflection yoke will be developed to achieve the stable motion and the miniature body.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116186652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Investigation on microstructure and resistivity in Cu-TSVs for 3D packaging 三维封装用cu - tsv微结构及电阻率研究
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.5104/JIEPENG.9.E16-010-1
A. Satoh, Hiroyuki Kadota, T. Inami, Masahiko Itou, J. Onuki
{"title":"Investigation on microstructure and resistivity in Cu-TSVs for 3D packaging","authors":"A. Satoh, Hiroyuki Kadota, T. Inami, Masahiko Itou, J. Onuki","doi":"10.5104/JIEPENG.9.E16-010-1","DOIUrl":"https://doi.org/10.5104/JIEPENG.9.E16-010-1","url":null,"abstract":"The resistivity of Cu-TSV(Through Silicon Via) substantially affects the performance of system LSIs. Hence, it is very important to evaluate the resistivity of Cu-TSV precisely. Researchers and engineers were concerned about the possibility that many impurities from additives and plating solutions were incorporated into Cu-TSV during plating and these impurities would precipitate along the grain boundaries, leading to great scattering in grain sizes from tens of nm to several μm, resulting in resistivity increase after annealing. However, the precise resistivity was not always published up to now. In order to obtain accurate resistivity, we have developed a new TEG(Test Element Group) pattern and its manufacturing process. Using TEGs, we obtained 4.13μΩ·cm as the resistivity of one Cu-TSV. The mechanism of high-resistivity of Cu-TSV was discussed by measuring grain size scattering using X-ray diffraction.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"75 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116288886","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fundamental study on simplified temperature prediction method for LED 简化LED温度预测方法的基础研究
2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486810
Akira Horii, T. Hatakeyama, R. Kibushi, M. Ishizuka
{"title":"Fundamental study on simplified temperature prediction method for LED","authors":"Akira Horii, T. Hatakeyama, R. Kibushi, M. Ishizuka","doi":"10.1109/ICEP.2016.7486810","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486810","url":null,"abstract":"In recent years, LED is attracted attention as new light sources. LED bulb is one of the LED usages and this is a replacement for conventional indoor lighting such as incandescent light bulbs and fluorescent lamps. LED bulbs have advantages such as long life and low power consumption compared to other light sources. However volume of LED chip is small and the amount of heat generation per area is becoming large. That causes degradation of LED chips because of high temperature. Therefore, thermal design is important for LED bulbs and other LED devices. The thermal design of the LED must take into account various parameters, for example thermal conductivity, area and thickness of the substrate of the LED and heat transfer coefficient around the LED. However, there are no guidelines for thermal design of the LED, and reliability of the LED is depending on thermal designers. This work aims to propose a guideline of thermal design of the LED. In this paper, as the first step of the guideline, simple temperature prediction method for the LED was discussed. Thermal network model was employed as the simple method. To verify an appropriate simple temperature prediction method with thermal network model, CFD (Computational Fluid Dynamics) analysis was conducted and important points for making thermal network model are discussed. As a result, it was found that a key point for making a simple temperature prediction model of the LED is how to estimate the heat flow in in-plane direction and thickness plane direction of the substrate simultaneously.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126355244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
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