Investigation of connecting techniques for high temperature application on power modules

Abstract

Recently, there have been many developments on power devices to improve their functions. Especially, the junction temperature of power modules that equip SiC (Silicon Carbide) chips will be higher than 200 °C as current densities are too high, and new electronic packaging technologies shall be developed to meet higher temperature and higher power cycle durability requirements. In order to meet these requirements, in the present study, we propose Cu wire, Cu ribbon and Cu connector between Cu wirings of the substrates and investigate their feasibilities, including electrical resistances, footprints of bonding area, and bonding reliability under accelerated stress test, respectively.