2016 International Conference on Electronics Packaging (ICEP)最新文献

No pumping at 450°C with electrodeposited copper TSV 在450°C电沉积铜TSV时不泵送

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-08-18 DOI: 10.1109/ECTC.2016.337

K. Kondo

引用次数: 0

Mechanical fatigue assessment of SAC305 solder joints under harmonic vibrations SAC305焊点在谐波振动下的机械疲劳评价

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-06-09 DOI: 10.1109/ICEP.2016.7486818

J. Libot, L. Arnaud, O. Dalverny, J. Alexis, P. Milesi, F. Dulondel

{"title":"Mechanical fatigue assessment of SAC305 solder joints under harmonic vibrations","authors":"J. Libot, L. Arnaud, O. Dalverny, J. Alexis, P. Milesi, F. Dulondel","doi":"10.1109/ICEP.2016.7486818","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486818","url":null,"abstract":"Vibration-induced solder joint fatigue is a main reliability concern for aerospace and military industries whose electronic equipment used in the field is required to remain functional under such loading. Due to the RoHS directive which eventually will prevent lead from being utilized in electronic systems, there is a need for a better understanding of lead-free mechanical behavior under vibration conditions. This study reports the durability of Sn3.0Ag0.5Cu (SAC305) solder joints subjected to harmonic solicitations at three specific temperatures (-55°C, 20°C and 105°C). A test assembly is designed and consists in a single daisy-chained 1152 I/O ball grid array (FBGA1152) package assembled on a flame retardant (FR-4) printed circuit board (PCB). The vibration levels are imposed by a controlled deflection at the center of the board at its natural frequency. The electric continuity is monitored to determine the number of cycles to failure of each sample. Mode shape measurements with a scanning vibrometer are also conducted and correlated with Finite Element Analysis (FEA) to ensure accurate calculation of stress within the critical solder balls at the corners of the component. The failed specimens are then cross-sectioned in order to determine failure modes. A comparison of SAC305 durability with SnPb36Ag2 solder is given, along with a set of lifetime measurements for two complementary assemblies: 68 I/O Leadless Chip Carrier (LCC68) and 324 I/O Plastic Ball Grid Array (PBGA324). It turns out that SAC305 outperforms SnPb36Ag2 and the effect of temperature on the mechanical durability of SAC305 appears to be minor. Failure analysis points out different failure modes such as ductile and brittle cracks at the interface between the solder bulk and the component, along with pad cratering-induced copper trace failures. FEA calculations provide data to estimate the high cycle fatigue (HCF) behavior of SAC305 solder under harmonic vibrations.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121586571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Broadband antenna with asymmetrical radiating elements for cognitive radio system 认知无线电系统非对称辐射单元宽带天线

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-06-09 DOI: 10.1109/ICEP.2016.7486913

Tomohiro Yamada, Shota Zempo, F. Koshiji, K. Koshiji

引用次数: 0

High resolution printing processes with high throughput, enhanced step coverage, and high design flexibility 高分辨率印刷工艺，具有高吞吐量，增强步骤覆盖和高设计灵活性

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-06-09 DOI: 10.1109/ICEP.2016.7486794

Y. Kusaka, H. Ushijima

引用次数: 0

Development of a Ag/glass die attach adhesive for high power and high use temperature applications 高功率、高温用银/玻璃模具粘接胶的研制

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-05-01 DOI: 10.1109/ICEP.2016.7486838

Maciej Patelka, N. Sakai, Cathy Trumble

{"title":"Development of a Ag/glass die attach adhesive for high power and high use temperature applications","authors":"Maciej Patelka, N. Sakai, Cathy Trumble","doi":"10.1109/ICEP.2016.7486838","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486838","url":null,"abstract":"The increasing power densities of certain semiconductor devices such as SiC and GaN require higher continuous use temperatures and high thermal properties. For example, one application is for a continuous use temperature of 300°C with SiC devices, with a die attach process at about 370°C. This paper describes development of an Ag/glass die attach paste which demonstrates high performance and reliability, for high temperature continuous use. The Ag/glass paste contains a unique crystallizing glass having a crystalline re-melt temperature of greater than 300°C and less than about 370°C. During the die attach process with Ag/glass paste, the crystallized glass component melts at about 350°C and wets the die and substrate surfaces. During the cool down of the die attach process, the glass crystallizes creating a robust structure having a re-melt temperature greater than 300°C. Therefore, die adhesion remains high for a 300°C continuous use temperature. Another key requirement of a die attach adhesive for use with SiC devices is power dissipation; i.e., heat dissipation. High thermal conductivity and very low interfacial thermal resistance for die attach parts have been demonstrated in this paper. Thermal resistance measurements (laser flash method) were consistently as low as 0.01Kcm2/W, while the bulk thermal conductivity was about 100W/mK. An inherent advantage of glass as the adhesive agent is its wettability on oxide or metal surfaces. This allows the option to use bare dies and substrates in lieu of metalized surfaces in certain applications, leading to the potential for significant cost savings. This new technology replaces the higher cost solder alloys and provides a high reliability option that meets the requirements for SiC device packaging.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134495875","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2

Ultra thick photo resist for FO-WLP 用于FO-WLP的超厚光刻胶

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486890

K. Satou, Makoto Katsurayama, Akito Hiro, Hirokazu Sakakibara, K. Okamoto, Koichi Hasegawa

{"title":"Ultra thick photo resist for FO-WLP","authors":"K. Satou, Makoto Katsurayama, Akito Hiro, Hirokazu Sakakibara, K. Okamoto, Koichi Hasegawa","doi":"10.1109/ICEP.2016.7486890","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486890","url":null,"abstract":"With the current tremendous market growth of mobile devices toward the new era of Internet of Things/Internet of Everything, the requirements for semiconductor packaging structures are getting more challenging. In this situation, FO-WLP (Fan-Out Wafer Level Packaging) has been widely discussed as one of the major solutions in the 3D packaging area. We have been developing negative tone resists (ELPAC THB series) for re-distribution layer (RDL), solder bumps, copper pillars, and micro bumps, which show good lithographic properties, good chemical resistance for various plating chemicals, and good strippability. Based upon these technologies, we are now strongly focusing on new resists for finer RDL and high copper pillars in order to support FO-WLP players to efficiently fabricate their innovative packages. In this paper, we report on the latest ultra-thick photo resist to fabricate high copper pillars over 100um for FO-WLP. The new resist shows excellent coating performance to achieve 100um thickness in a single coat, or over 200um thickness with double coating, on 12 inch wafer. The resist provides good coating uniformity and TTV without bubbles, defects, wrinkles or other errors. On top of that, the new material design enables finer resolution for ultra-thick films, with an aspect ratio of 4 and beyond. We also report high copper pillars fabricated with the new THB resist. It is expected that the new ultra-thick resist will be the best candidate for FO-WLP. We will discuss the new material concept in more detail.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116994496","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 1

Evaluation of relationship between residual stress of ICs and package warpage caused by flip-chip bonding 集成电路残余应力与倒装键合引起的封装翘曲关系的评估

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486871

T. Enami, O. Horiuchi, Younggun Han, H. Tomokage

引用次数: 0

Electrochemical corrosion of interconnect materials by residual reductants 残留还原剂对互连材料的电化学腐蚀

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486831

Ming-yan Lai, Jenn-Ming Song, Jing-Yuan Lin

引用次数: 0

Challenge to zero CTE and small cure shrinkage organic substrate core material for thin CSP package 薄CSP封装对零CTE和小固化收缩有机基板芯材料的挑战

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486778

N. Sakamoto, S. Takanezawa, S. Tsuchikawa, M. Takekoshi, K. Oohashi, K. Morita

引用次数: 0

Reliability test for integrated Glass interposer 集成玻璃中间层的可靠性试验

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI: 10.1109/ICEP.2016.7486780

Ching-Kuan Lee, Jen-Chun Wang, Yu-Min Lin, C. Zhan, Wen-Wei Shen, H. Fu, Yuan-Chang Lee, C. Chiang, Su-Ching Chung, Su-Mei Chen, Chia-Wen Fan, Hsiang-Hung Chang, W. Lo, Yung Jean Lu

引用次数: 1