2016 International Conference on Electronics Packaging (ICEP)最新文献

{"title":"Low temperature bonding using microscale Cu particles coated with thin Sn layers at 200 °C","authors":"Xiangdong Liu, Siliang He, H. Nishikawa","doi":"10.1109/ICEP.2016.7486835","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486835","url":null,"abstract":"Sn-Cu intermetallic compounds (IMCs) consisted joints were achieved by a low temperature solid-state bonding using microscale Cu particles coated with thin Sn layers for high temperature die attach application. The bonding process was conducted at 200 °C for 30 min under an applied pressure of 10 MPa using a thermo-compression bonding system. The formic acid atmosphere was used for reducing the oxide layer on the Sn coating and the Cu substrate during the bonding process. After bonding, the joint showed a microstructure fully comprising Cu-Sn intermetallic compounds matrix with a dispersion of pure Cu particles, and a shear strength equivalent to that of conventional Pb-5Sn solder could be achieved. The results demonstrate that low temperature solid-state bonding using microscale Cu particles coated with thin Sn layers has the potential to fulfill the requirement of die attach application.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128446244","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Advanced design for optical devices' thermal fluid coupling dissipating","authors":"Chung-Ting Wang, Ping-Feng Yang, C. Chien, Wei-Chi Lee, Ying-Xu Lu, Bo-Syun Chen, Yu-Yan Chen","doi":"10.1109/ICEP.2016.7486792","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486792","url":null,"abstract":"Commercial values of the relevant optical products are very potential in the future because more and more applications are successfully used in many fields. Currently, there several solutions are developing in Advanced Semiconductor Engineering of Chungli and Kaohsiung (ASE CL and KH), especially concentrating on the optical sensor and transceiver. Regarding the optical sensor transceiver, the edge-emitting laser (EEL) are commonly used as a light source of the single-mode fiber for a long-range network of optical fiber due to the low dispersion and long transmission distance. However, the Joule heat generation by the laser will cause the temperature to rise thereby affecting the laser output efficiency and quality, and will cause the position unable to be precisely allowed when EEL couples the optical components, which leads to low optical coupling efficiency and even affects the transmission quality of the fiber. The present research was mainly conducted by the finite element method (FEM) to study the influence of the substrate type, housing and dissipating materials on the thermal effect of EEL package structure. The numerical simulation results were adopted as the response surface method (RSM) to obtain the optimized design parameters for the heat dissipation solutions of the substrate, housing and dissipating materials in EEL package structure. The results showed that thermal conductivity variations of the substrate is a main influence factor to the response temperature of EEL optical package, but the influence on the response temperature is almost none when thermal conductivity greater than 85.15 W/mK. In addition, the present research obtained a significant design rule, which is able to seek out a suitable combination of materials within the required temperature range, and can be further controlled the costs and optimized the performance.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128964463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Development of a simple cup method for water vapor transmission rate measurements under high-temperature conditions","authors":"Shinya Iizuka, K. Murata, M. Sekine, C. Sato","doi":"10.1109/ICEP.2016.7486882","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486882","url":null,"abstract":"A novel method has been studied to measure high-temperature water vapor transmission rates (WVTRs) for sealing materials such as epoxy encapsulants. Sealing materials are widely used as electronic components and must be moisture resistant under the damp heat test conditions for electronic components, e.g., 60 °C and 85 °C. To prevent samples from damage during high-temperature measurements using the conventional cup method, we built a new cup unit with a pressure-adjusting mechanism. This new cup is used to measure WVTRs without damaging the thin epoxy encapsulant membranes (thicknesses of 120-220 μm). Arrhenius plots of the WVTRs for epoxy encapsulants measured by using the new cup exhibit linear relationships between temperatures of 25-85 °C.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"17 Suppl 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124588686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Heat transfer analysis in the thermal compression bonding for CoW process","authors":"Noboru Aasahi, M. Nimura","doi":"10.1109/ICEP.2016.7486908","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486908","url":null,"abstract":"We report the results of heat transfer analysis of CoW (chip on wafer) process in which IC chips are bonded on a Si wafer by using thermal compression bonding (TCB). The throughput can be remarkably improved because a lot of chips can be pre bonded on a wafer by using non-conductive film (NCF) which is pre-applied adhesive and can be thermally pressed at a time. However, to realize this process, it is necessary to reduce the heat influence on adjacent chips and to suppress the heat conducting to a substrate from the bonding head. In this research, we analyzed the temperature distribution in NCF layer, and the behavior of heat conduction from the bonding head to the adjacent chips. As a result, it was found that thermal influence on the adjacent chips was small in the case of thin substrate but the bonding temperature also decreased, especially in peripheral part of NCF layer. In addition, we proved that it is possible to prevent the reduction of the bonding temperature with heat insulation stage, and to decrease the thermal influence to adjacent chips by using air cooling system.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114110147","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Printing technology for electronics","authors":"T. Furukawa","doi":"10.1109/ICEP.2016.7486793","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486793","url":null,"abstract":"All kinds of printing method include merits and demerits each. Therefore, cautions are required for adapting printing technique in the manufacturing process of electronics products. The various printing methods used in the electronics field are introduced in this talk. And, the printing technique for the OLED lighting which is studied in INOEL is explained.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116221692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra low loss build-up film for fine pitch applications","authors":"Ayane Kasahara, Tetsuro Iwakura, Y. Kondo, T. Irino, H. Shimizu","doi":"10.1109/ICEP.2016.7486779","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486779","url":null,"abstract":"The new ultra-low loss build-up film has been developed by the combination of the matrix layer, which has the semi-IPN structure, and the primer layer. The matrix material was designed and prepared by the original polymer blend modification technology with co-crosslinking reaction of rigid thermosetting resin and the reactive low polar polymer. Dielectric constant and dissipation factor at 1-20 GHz of the film were <;3.4 and <;0.004, respectively. And the film had semi additive process compatibility and small surface roughness after desmear treatment. Wiring formation of 5 / 5μm line and space was demonstrated thereon. The peel strength to the plated Cu on the surface of the film, which had small roughness of <;100 nm, was 0.6 kN/m. The coefficient of thermal expansion was 18ppm/°C.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124534658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Evaluation of pressure drop characteristics around axial cooling fans with electrical components","authors":"T. Fukue, K. Hirose, T. Hatakeyama, M. Ishizuka, K. Koizumi","doi":"10.1109/ICEP.2016.7486806","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486806","url":null,"abstract":"This paper describes the details of pressure drop characteristics around axial cooling fans mounted in high-density packaging electronic equipment in order to improve prediction accuracy of supply flow rate of the fans in thermal design. Forced air convection cooling driven by cooling fans is the commonest strategy for dissipating heat from electrical devices. Cooling performance of the fans is mainly decided by supply airflow rate. The supply flow rate is strongly affected by pressure drop characteristics in electronic equipment. Especially in the case of high-density packaging electronic equipment, the airflow around the fan generally becomes complex and an accurate prediction of pressure drop characteristics around the fans become significantly difficult. In addition, due to the change of the airflow pattern around the fans by the electrical components mounted near the fans, a deterioration of fan performance itself is sometimes caused. Hence the accurate prediction of supply flow rate of the fans in high-density packaging electronic equipment is generally difficult. However, in order to shorten the period of thermal design, more detailed investigation about airflow characteristics around the fans mounted in high-density packing electronic equipment should be done in order to achieve the accurate prediction of fan's supply flow rate easily. We are trying to develop a prediction model of accurate supply flow rate of the fans mounted in high-density packaging electronic equipment. In this report, the pressure drop characteristic near the axial fan when an obstruction, which simulates electrical components mounted near the fans, is mounted in front of the fan was evaluated while changing the type of the obstruction. The pressure drop around the fan with the obstruction is mainly composed of three factors; the pressure drop around the obstruction, the inlet pressure drop at the fan and the outlet pressure drop from the fan. A level of these pressure drop factors were evaluated quantitatively by comparing experimental results with the conventional pressure drop database. In order to evaluate the accurate supply flow rate of the fan in high-density packaging electronic equipment, an important factor was clarified from the viewpoint of the pressure drop characteristics around the fans.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127952884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Resolving key manufacturing challenges in Flip Chip QFN package","authors":"James Raymond Baello, Jason B. Colte, R. Quiazon","doi":"10.1109/ICEP.2016.7486846","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486846","url":null,"abstract":"FC (Flip Chip) QFN package integrates a flip chip interconnect in a QFN (Quad Flat No-leads) body and combines the electrical efficiency of the flip chip interconnect and thermal efficiency of the QFN package. Other advantages include shorter assembly cycle time vs wirebonded QFN and small chip-to-pkg ratio closest to WCSP in terms of package footprint. The versatility of the flip chip QFN package opens new markets with applications on power management and DC-to-DC converters. Although advantageous as a package, the interconnect and package combination introduces several challenges due to its unique design features. This paper enumerates the manufacturing challenges of flip chip QFN associated with its unique package construction features and their possible solutions to the challenges by selecting the correct materials, defining design rules and performing process optimizations.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128422747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Variation in electrical conductivity of stretchable printed wires and electrodes due to fatigue damage in several situations","authors":"M. Inoue, Yasunori Tada, Y. Itabashi, Ryo Kimura, S. Taya","doi":"10.1109/ICEP.2016.7486798","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486798","url":null,"abstract":"Stretchable wires and electrodes were printed on a textile substrate using a polyurethane-based conductive paste with silver fillers loading. Variation in their electrical resistivity was examined during a cyclic uniaxial tensile test at 10 % strain. The resistivity decreased to approach an equilibrium value when the sample was fixed at 10 % strain. The resistivity also exhibited a similar time-dependency during unloading after the cyclic tensile test (after-effect). In addition, the effect of mechanical fatigue should be taken into account to analyze their washability using a washing machine.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128547410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Enhancement of the partial discharge inception voltage of ceramic substrates for power modules by trench coating","authors":"U. Waltrich, C. F. Bayer, M. Reger, A. Meyer, X. Tang, A. Schletz","doi":"10.1109/ICEP.2016.7486885","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486885","url":null,"abstract":"Due to the ongoing development of high-blocking semiconductors the installed ceramic circuit boards in power modules, such as DBC (Direct Bond Copper) or AMB (Active Metal Brazed) substrates, will have to isolate high voltages (HV) beyond 6.5 kV in the near future with high lifetime and reliability. Such high blocking voltages and the correlating increased electrical field strengths induce partial discharges (PD) in the ceramic substrate as well in the encapsulating organic materials, which represent a key degradation mechanism of HV power modules. In this work a promising novel coating technology for ceramic substrate trenches, significantly enhancing the partial inception voltage (PDIV) of these substrates, is presented. The coating works as a refractive field control and reduces the field strengths in the most critical section for PD - the so-called triple point - between ceramic, encapsulate and copper metallization. Electric field simulations show a possible reduction of the electric loads in that critical area by over 10 %. Phase resolved partial discharge (PRPD) tests confirm the simulation results by significantly increased partial discharge inception voltages (PDIV) of trench coated Al2O3 DBC substrates (curamik® power) compared to untreated ones. Long term aging tests (1000 h @ 85 °C/85 % r. h.) on trench coated DBCs, covered with Wacker SilGel 612®, were executed to examine the robustness of this coating and to investigate the PD behavior of DBC substrates depending on the degree of aging. The novel coating looks very promising.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130183609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}