{"title":"Relationship between mechanical and electrical properties of Cu wire and Al pad bonding","authors":"Y. Ishida, K. Sunahara","doi":"10.1109/ICEP.2016.7486879","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486879","url":null,"abstract":"There are several reliability problems, while Cu wire bonding has been used instead of Au wire bonding in microelectronics packaging. A previous work indicated that after autoclave test maintaining at 394 K, 100% relative humidity and 0.2 MPa for 300 h, a shear strength of Cu wire bonding decreased to about half that of initial Cu, although a shear strength of Au wire bonding did not decreased. In this work, we investigated the relationship between mechanical and electrical properties of Au or Cu wire and Al pad bonding in more detail. For a mechanical property, the shear strength of Cu wire bonding gradually decreased to about two-fifths of that of initial Cu at 700 h. For an electrical property in a function test, 11 from 20 specimens of Cu wire bonding suddenly failed at 600 h and 3 specimens additionally failed at 650 h. From these results, the mechanical properties are different from those of electrical. Using SEM and observation, we investigated the dependence of the mechanical and electrical properties on the interface morphology between Cu wire and Al pad compared with Au wire.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"103-105 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130564387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lorraine R. Duldulao, Ruby Ann M. Camenforte, R. Caguioa, Jason B. Colte
{"title":"Resolution of contamination on controller IC bond pads for high Pb multi-stack MCM Clip QFN","authors":"Lorraine R. Duldulao, Ruby Ann M. Camenforte, R. Caguioa, Jason B. Colte","doi":"10.1109/ICEP.2016.7486845","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486845","url":null,"abstract":"Clip QFN is a multi-stack MCM package which composes of multiple dies and multiple clips vertically stacked to achieve optimum device performance and minimize footprint. As the number of devices grows, new challenges arise to meet quality and productivity requirements of the product. Different bond pads for the controller die were introduced which added complexity in making these products manufacturable. Given that the technology for each bond pad is different, it was expected that each will have different response on the current bill of materials (BOM) and process. Contamination on the bond pads was observed during wire bonding process causing low assembly yield and affected mean time between assist (MTBA). To address the issue, current BOM and process at prebond were checked. Root cause of discoloration was determined and found out that the current solder paste and the peak temperature during reflow were causing the discoloration. Process optimization alone was not able to completely eliminate the contamination thus the need to modify the existing BOM and process flow became necessary. Through the modification of existing Clip QFN BOM and process flow, contamination on bond pads was eliminated.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127465711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Numerical prediction and experimental validation of multiple phosphor white LED spectrum","authors":"J. Lo, S. Lee, Xungao Guo, Huishan Zhao","doi":"10.1109/ICEP.2016.7486782","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486782","url":null,"abstract":"Conventional phosphor converted white light LEDs utilize yellow phosphor to convert the blue light emitted from the chip to yellow light. Although this can generate white light with various correlated color temperatures (CCT), the color rendering properties are generally poor as the spectrum of the LEDs, as compared with the reference light source, is not broad enough. The red light output is low in particular. This limitation is caused by the emission spectrum of yellow phosphor. To improve the color rendering properties, multiple phosphors with different emission spectra should be used. For instance, a certain amount of red or orange phosphors may be used to mix with yellow phosphor to increase the output in the red region. In this paper, a numerical model is proposed to predict the emission spectra of LEDs with multiple phosphors. The excitation and emission spectra of various phosphors are measured and input to the model. The mixing ratio and reabsorption between phosphors have also been taken into consideration. White light LEDs with multiple phosphors are fabricated. The spectra are measured and compared with the modeling results. It is found that the proposed model can estimate the emission spectra of LEDs with multiple phosphors with a high degree of accuracy.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129812193","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Y. Kim, S. Kodama, N. Maeda, K. Fujimoto, Y. Mizushima, A. Kawai, T. Hsu, P. Tzeng, T. Ku, T. Ohba
{"title":"Electrical characteristics of bumpless interconnects for through silicon via (TSV) and Wafer-On-Wafer (WOW) integration","authors":"Y. Kim, S. Kodama, N. Maeda, K. Fujimoto, Y. Mizushima, A. Kawai, T. Hsu, P. Tzeng, T. Ku, T. Ohba","doi":"10.1109/ICEP.2016.7486786","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486786","url":null,"abstract":"This paper describes electrical characteristics of bumpless and dual-damascene TSV interconnects for three-dimensional integration (3DI) using Wafer-on-Wafer (WOW) technology. Process optimization counter to integration issues of TSV formation process is demonstrated using test vehicle fabricated with 300-mm wafer and characterized by chain resistance and leakage current in the wafer level.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116997441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Lai, Peixin Wu, Tzu‐Chien Wei, Tseng-Chieh Pan, Chih-Ming Chen
{"title":"Front-side metallization of silane-compoundmodified Si by electroless deposition of Ni(P) and interfacial characterizations","authors":"K. Lai, Peixin Wu, Tzu‐Chien Wei, Tseng-Chieh Pan, Chih-Ming Chen","doi":"10.1109/ICEP.2016.7486842","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486842","url":null,"abstract":"Front-side metallization techniques for nonconductive substrates receives numerous attention due to their practical application importance in the microelectronic and solar cell industries. Electroless deposition of Ni(P) with the help of catalyst such as Sn/Pd colloids is a common method to deposit a metallic film on non-conductive substrates. However, weak physical adsorption of the Sn/Pd colloids on the substrate may influence the adhesion strength of the Ni(P) film. Besides, employment of the Sn/Pd colloids involves an acceleration step (using acid solution to remove the Sn ion shell) which inevitably increases the complexity of the activation process. In this study, we demonstrated a promising method to fabricate an adhesive Ni(P) film on a textured Si substrate by using polyvinylpyrrolidone-capped Pd nanoclusters (PVP-nPd) as the catalyst and a silane compound layer as an agglutinant to bridge with the Pd cores in the PVP-nPd clusters. An improved adhesion strength of the Ni(P) film on Si is obtained even without postannealing treatment which shows high potentials in the applications of temperature-sensitive substrates. For potential application in the Si-based solar cells, post-annealing treatment was conducted to form the Ni silicides at the Ni(P)/Si interface. The experimental results indicated that the cleaning process of Si surface prior to the Ni(P) film deposition was crucial for the film uniformity and stability against the thermal annealing treatment.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122500970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Electromagnetic characteristics of body area network using magnetically-coupled wearable coils worn on bent arm","authors":"Yusuke Fujita, F. Koshiji, K. Koshiji","doi":"10.1109/ICEP.2016.7486912","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486912","url":null,"abstract":"We have proposed body area networks using magnetic coupling between coils worn on an arm, and confirmed that the transmission characteristics were improved more than 20 dB compared with those of the conventional human body communication using electrodes in contact with the body. However, the arm will be bent with various angles in daily life. In this paper, electromagnetic characteristics such as transmission characteristics between the wearable coils worn on the bent arm and magnetic field distributions around the coils and arm were investigated. As a result, the transmission characteristics were stable and hardly influenced against bending the human arm with various angles, and sufficient biocompatibility with specific absorption rate less than 2 W/kg was confirmed.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"247 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115321759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. Yamaguchi, N. Miyagi, M. Mita, K. Yamasaki, K. Maekawa
{"title":"On-demand gold laser-plating onto stainless steel for electrical contacts","authors":"M. Yamaguchi, N. Miyagi, M. Mita, K. Yamasaki, K. Maekawa","doi":"10.1109/ICEP.2016.7486839","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486839","url":null,"abstract":"The present study discusses the formation of a conductive film from noble metal nanoparticles onto stainless steel substrate for electrical components, such as connectors, where conventional electroplating is not applicable. The proposed “laser plating” method consists in on-demand dispensing with nanoparticle paste followed by a short-time preheating and laser sintering. The aims are fourfold: to establish sintering technology for gold nanoparticles placed on an 18%Cr-8%Ni stainless steel substrate covered with a passivation film, to characterize the laser-sintered film, to discuss the laser sintering mechanism, and to examine applicability to industry. The major results obtained are as follows: the laser sintering formed a gold film with a diameter of 0.8 mm and a thickness of 0.3-1.0 μm on the stainless steel substrate without any surface pretreatment; a laser with a wavelength of 915 nm enabled instantaneous sintering within one second in air; the laser-sintered gold nanoparticle film had such a high adhesion to the substrate that no separation occurred after 90°-0.5R bend-peel tests; the high adhesion was attributed to interdiffusion of gold, iron, chromium and nickel in the course of sintering; a relatively high-preheat temperature around 523 K for 60 s produced a paste surface with a suitable absorbance of the infrared laser; a primary sintering of the preheated gold nanoparticles with a small amount of solvents, followed by an auxiliary sintering from the substrate side made possible an efficient sintering of the nanoparticles as well as high adhesion to the stainless steel substrate with a high thermal conductivity; the laser-sintered gold film possesses such a good electrical property.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"18 5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132019274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Room temperature bonding of Polymethylglutarimide for layer transfer method","authors":"T. Matsumae, T. Suga","doi":"10.1109/ICEP.2016.7486836","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486836","url":null,"abstract":"Room temperature bonding of Polymethylglutarimide was performed for a damage-free layer transfer method. The PMGI layer was bonded to support Si wafer by using the Surface activated bonding method using nano-adhesion layers. Using SAB, bonded area covering around 90% of the wafer surface, with a room temperature bond strength of ~1 J/m2 is achieved. Micro voids at bond interface are never observed using scanning electron microscope. For debonding process, PMGI dissolve in N-methylpyrrolidone based solvent. Extremely small amount PMGI residues are detected by using atomic force microscope surface profile.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125663213","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yi-Cheng Chu, C. Zhan, Han-wen Lin, Yu-wei Huang, C. Chen
{"title":"Electromigration in microbumps with Cu-Sn intermetallic compounds","authors":"Yi-Cheng Chu, C. Zhan, Han-wen Lin, Yu-wei Huang, C. Chen","doi":"10.1109/ICEP.2016.7486822","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486822","url":null,"abstract":"The electromigration test of the microbump interconnects with Cu/Cu<sub>6</sub>Sn<sub>5</sub>/Cu structure is reported in this study. This Cu<sub>6</sub>Sn<sub>5</sub> intermetallic compound layer was single-crystal like. The diameter of the microbumps in die-to-die stacking was 30 μm. Test vehicles were applied by a current density of 2.2×10<sup>5</sup> A/cm<sup>2</sup> and settled on a hotplate at 150°C. The resistances of the microbumps were simultaneously monitored by the four point probe during the test procedure. The Cu<sub>6</sub>Sn<sub>5</sub> transformed into Cu<sub>3</sub>Sn in the early stage and porous Cu<sub>3</sub>Sn generated in the Cu<sub>6</sub>Sn<sub>5</sub> layer at later stages. The morphology of porous Cu<sub>3</sub>Sn could be caused by the current direction. The decomposition of Cu<sub>6</sub>Sn<sub>5</sub> into Cu<sub>3</sub>Sn and Sn occurs during the EM test. The migration of Sn atoms to the periphery of the under-bump-metallization was forced by the current stress, which may be the mechanism of the pore formation with the pore volume of 41.4%. More porous Cu<sub>3</sub>Sn was found in the cathode end which was an evidence of the EM effect. Finite element analysis was used to do some calculation based on theoretical stoichiometry and microstructures in the test results. The resistivity of porous Cu<sub>3</sub>Sn structure which was about 30 μΩ-cm which was three times larger than that of Cu<sub>3</sub>Sn. The porous Cu<sub>3</sub>Sn may threaten the reliability issues of microbumps.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126787584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"First-principles density function calculations of physical properties of triclinic Cu7In3","authors":"Ching-Feng Yu, Hsien-Chie Cheng, Wen-Hwa Chen","doi":"10.1109/ICEP.2016.7486848","DOIUrl":"https://doi.org/10.1109/ICEP.2016.7486848","url":null,"abstract":"First principles density functional theory calculations within the generalized gradient approximation are performed to comprehensively study the structural, elastic, electronic and thermodynamic properties of triclinic single and polycrystalline Cu<sub>7</sub>In<sub>3</sub>. The polycrystalline elastic properties are predicted using the Voigt-Reuss-Hill approximation and the thermodynamic properties are evaluated based on the quasi-harmonic Debye model. Their temperature, hydrostatic pressure or crystal orientation dependences are also addressed, and the predicted physical properties are compared with the literature experimental and theoretical data and also with those of three other Cu-In compounds, i.e., CuIn, Cu<sub>2</sub>In and Cu<sub>11</sub>In<sub>9</sub>. The present calculations show that in addition to being a much better conductor compared to Cu<sub>2</sub>In and Cu<sub>11</sub>In<sub>9</sub>, Cu<sub>7</sub>In<sub>3</sub> crystal reveals weak elastic anisotropy, high ductility and low stiffness, and tends to become more elastically isotropic at very high hydrostatic pressure. Moreover, the Cu<sub>7</sub>In<sub>3</sub> holds the largest high-temperature heat capacity among the four Cu-In compounds.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124041583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}