通过硅通孔(TSV)和晶圆对晶圆(WOW)集成的无颠簸互连的电气特性

2016 International Conference on Electronics Packaging (ICEP) Pub Date : 2016-04-20 DOI:10.1109/ICEP.2016.7486786

Y. Kim, S. Kodama, N. Maeda, K. Fujimoto, Y. Mizushima, A. Kawai, T. Hsu, P. Tzeng, T. Ku, T. Ohba

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引用次数: 9

摘要

本文介绍了采用晶圆对晶圆(WOW)技术实现三维集成(3DI)的无颠簸和双大马士革TSV互连的电气特性。利用300毫米晶圆制造的测试车，以晶圆级的链阻和漏电流为特征，证明了TSV形成过程集成问题的工艺优化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrical characteristics of bumpless interconnects for through silicon via (TSV) and Wafer-On-Wafer (WOW) integration

This paper describes electrical characteristics of bumpless and dual-damascene TSV interconnects for three-dimensional integration (3DI) using Wafer-on-Wafer (WOW) technology. Process optimization counter to integration issues of TSV formation process is demonstrated using test vehicle fabricated with 300-mm wafer and characterized by chain resistance and leakage current in the wafer level.

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2016 International Conference on Electronics Packaging (ICEP)

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