Back-via 3D integration technologies by temporary bonding with thermoplastic adhesives and visible-laser debonding

M. Murugesan, T. Fukushima, J. Bea, H. Hashimoto, Sang Hern Lee, Mizuki Motoyoshi, Tetsu Tanaka, K. Lee, M. Koyanagi
{"title":"Back-via 3D integration technologies by temporary bonding with thermoplastic adhesives and visible-laser debonding","authors":"M. Murugesan, T. Fukushima, J. Bea, H. Hashimoto, Sang Hern Lee, Mizuki Motoyoshi, Tetsu Tanaka, K. Lee, M. Koyanagi","doi":"10.1109/ICEP.2016.7486825","DOIUrl":null,"url":null,"abstract":"Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues were left on the thinned wafer surface owing to their excellent solubility in solvents. The edge-trimming width and depth for Si before temporary bonding and the temporary bonding parameters using thermo-plastic adhesives were carefully investigated and optimized, in order to avoid any undesirable effects in background thin wafers. Through-Si-Vias with a diameter of 5-15 μm were formed by masking the via patterns (using i-line, back-side-alignment) on the SiO2 surface of the back-ground side of 30 - 50 μm-thick LSI wafer that was temporarily bonded to the support glass, followed by selective deep-reactive-ion-etching of SiO2, Si, and bottom SiO2, and subsequently barrier and seed layers deposition and via filling. Using laser debonding technique, the thinned Si wafers with Cu-vias were transferred to the other glass with different temporary adhesive. The observed low resistance values from the I-V data for 5000 Cu-via daisy chain reveals that the proposed back-via 3D integration using laser debonding is now ready for industrial use.","PeriodicalId":343912,"journal":{"name":"2016 International Conference on Electronics Packaging (ICEP)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-04-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEP.2016.7486825","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Back-via three-dimensional (3D) integration using multiple thin-wafer transfer processes has been developed at GINTI, Tohoku University, where visible laser was employed for wafer debonding. The potential advantages of laser debonding are (i) the realization of ultra-thin wafer releasing with less stress as compared to the conventional thermal and chemical debonding methods, and (ii) no adhesive residues were left on the thinned wafer surface owing to their excellent solubility in solvents. The edge-trimming width and depth for Si before temporary bonding and the temporary bonding parameters using thermo-plastic adhesives were carefully investigated and optimized, in order to avoid any undesirable effects in background thin wafers. Through-Si-Vias with a diameter of 5-15 μm were formed by masking the via patterns (using i-line, back-side-alignment) on the SiO2 surface of the back-ground side of 30 - 50 μm-thick LSI wafer that was temporarily bonded to the support glass, followed by selective deep-reactive-ion-etching of SiO2, Si, and bottom SiO2, and subsequently barrier and seed layers deposition and via filling. Using laser debonding technique, the thinned Si wafers with Cu-vias were transferred to the other glass with different temporary adhesive. The observed low resistance values from the I-V data for 5000 Cu-via daisy chain reveals that the proposed back-via 3D integration using laser debonding is now ready for industrial use.
背部-通过三维集成技术,通过热塑性粘合剂和可见激光脱粘临时粘合
在日本东北大学的GINTI,使用多个薄晶圆转移工艺开发了背通三维(3D)集成,在那里使用可见激光进行晶圆脱粘。激光脱粘的潜在优势是:(1)与传统的热脱粘和化学脱粘方法相比,实现了超薄晶片的释放,应力更小;(2)由于其在溶剂中的良好溶解性,薄晶片表面没有留下粘合剂残留物。为了避免对背景薄晶片产生不良影响,对临时粘接前Si的边缘修整宽度和深度以及热塑性胶粘剂的临时粘接参数进行了仔细的研究和优化。通过在30 ~ 50 μm厚的LSI晶片的背景侧(暂粘接于支撑玻璃上)的SiO2表面(采用i-line、背面对线)掩膜,选择性地对SiO2、Si和底部SiO2进行深度反应刻蚀,沉积阻挡层和种子层并填充通孔,形成直径为5 ~ 15 μm的通孔。采用激光脱粘技术,用不同的临时粘合剂将带有cu孔的薄硅片转移到另一种玻璃上。从5000 cu - through菊花链的I-V数据中观察到的低电阻值表明,使用激光脱粘的后通3D集成现在已经准备好用于工业用途。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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