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3rd IEEE International Conference on Group IV Photonics, 2006.最新文献

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High-Q Whispering Gallery Modes in Wet Etched Silica Microdisk Resonators Containing Silicon Nanocrystals 含硅纳米晶的湿蚀刻二氧化硅微盘谐振器中的高q窃窃廊模式
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708152
R. Kekatpure, M. Brongersma
{"title":"High-Q Whispering Gallery Modes in Wet Etched Silica Microdisk Resonators Containing Silicon Nanocrystals","authors":"R. Kekatpure, M. Brongersma","doi":"10.1109/GROUP4.2006.1708152","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708152","url":null,"abstract":"We demonstrate coupling of room temperature photoluminescence (PL) emission from silicon nanocrystals (nc-Si) embedded in silicon-rich silicon oxide (SRSO) to whispering gallery modes (WGMs) of 10 mum radius microdisk resonators. The resonators were fabricated by wet chemical etching of circular patterns defined by electron beam lithography and display very smooth edges. We observe nearly degenerate counter-propagating WGMs from the microdisks and measure quality factors of Q>3500 for the fundamental mode at 850 nm - limited by the absorption loss from the nanocrystals","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117107330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Self-Phase Modulation of Femtosecond Pulses in Photonic Wire Waveguides 飞秒脉冲在光子丝波导中的自相位调制
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708224
I. Hsieh, X. Chen, J. Dadap, N. Panoiu, R. Osgood, S. Mcnab, Y. Vlasov
{"title":"Self-Phase Modulation of Femtosecond Pulses in Photonic Wire Waveguides","authors":"I. Hsieh, X. Chen, J. Dadap, N. Panoiu, R. Osgood, S. Mcnab, Y. Vlasov","doi":"10.1109/GROUP4.2006.1708224","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708224","url":null,"abstract":"We use femtosecond pulses propagating inside a submicron cross-section Si photonic-wire waveguide to demonstrate strong interaction between self-phase modulation and dispersion effects, and provide comparison to a full theoretical analysis","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122028252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low-Power, High-Speed Mach-Zehnder Modulator in Silicon 低功耗，高速马赫-曾德调制器在硅
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708200
S.J. Specter, T. Lyszczarz, M. Geis, D. Lennon, J. Yoon, M. Grein, R. Schulein, F. Gan, F. Kaertner
{"title":"Low-Power, High-Speed Mach-Zehnder Modulator in Silicon","authors":"S.J. Specter, T. Lyszczarz, M. Geis, D. Lennon, J. Yoon, M. Grein, R. Schulein, F. Gan, F. Kaertner","doi":"10.1109/GROUP4.2006.1708200","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708200","url":null,"abstract":"A high speed diode-based optical modulator has been fabricated in silicon. This device achieves an extremely low VpiL of 0.02 V-cm from 10-100 MHz. Modulation depths of 30% have been achieved at an input power of 100 mW at 5 GHz","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127687078","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Introducing Carrier Localisation in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer 在全内反射光开关中引入载波定位以限制导频层中的载波扩散
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708171
D. Thomson, G. Reed, F. Gardes, G. Mashanovich, S. Howe
{"title":"Introducing Carrier Localisation in Total Internal Reflection Optical Switches to Restrict Carrier Diffusion in the Guiding Layer","authors":"D. Thomson, G. Reed, F. Gardes, G. Mashanovich, S. Howe","doi":"10.1109/GROUP4.2006.1708171","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708171","url":null,"abstract":"Previous total internal reflection based switches have suffered from the diffusion of carriers in the guiding layer leading to inefficient reflection and carrier injection. In our proposed device this problem is overcome by using a SiO2 barrier","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126110017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Evanescent field sensor using silicon-on-insulator photonic wires 利用绝缘体上硅光子线的倏逝场传感器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708145
A. Densmore, D. Xu, P. Waldron, S. Janz, J. Lapointe, P. Cheben, A. Delâge, B. Lamontagne, J. Schmid, E. Post
{"title":"Evanescent field sensor using silicon-on-insulator photonic wires","authors":"A. Densmore, D. Xu, P. Waldron, S. Janz, J. Lapointe, P. Cheben, A. Delâge, B. Lamontagne, J. Schmid, E. Post","doi":"10.1109/GROUP4.2006.1708145","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708145","url":null,"abstract":"A silicon-on-insulator based evanescent field sensor using silicon photonic wire waveguides is reported. The unique properties of high index contrast, submicron structures are exploited to enhance electric field magnitude and localization near the sensor surface. The evanescent field sensor is demonstrated in a Mach Zehnder configuration.","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"94 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114042577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence 时间分辨和时间积分光致发光技术研究纳米晶Si/SiO2多层膜中载流子复合的温度依赖性过程
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708177
S. Choi, Sung Kim, Y. Park, K. Kim
{"title":"Temperature-Dependent Carrier Recombination Processes in Nanocrystalline Si/SiO2 Multi-Layers Studied by Time-Resolved and Time-Integrated Photoluminescence","authors":"S. Choi, Sung Kim, Y. Park, K. Kim","doi":"10.1109/GROUP4.2006.1708177","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708177","url":null,"abstract":"In this study, ion beam sputtering deposition (IBSD) has been used to fabricate 50-period SiO2/SiOx multilayers, which have been subsequently annealed to form Si nanocrystals (NCs) in the SiOx layer. We report interesting correlation of temperature-dependent integrated PL intensity with the PL lifetime at each x value (NC size) and discuss possible mechanisms to explain the experimental results","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127574145","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays 基于界面失配阵列的硅基单片无缓冲AlGaSb发射体
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708216
D. Huffaker
{"title":"Monolithic, Bufferless AlGaSb Emitters on Si based on Interfacial Misfit Arrays","authors":"D. Huffaker","doi":"10.1109/GROUP4.2006.1708216","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708216","url":null,"abstract":"In this paper a monolithic, bufferless approach to III-V devices on Si substrates based on a self-assembled array of 90deg interfacial misfits (IMF) is discussed. This growth method, based on III-Sb, is fundamentally different from previously reported approaches since the strain energy due to the 13% lattice mismatch is fully and immediately relieved at the III-V interface rather than tetragonal distortion followed by defect formation as in III-As on Si","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127785684","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Out-of-Plane Total Internal Reflection Coupling Mirrors in Silicon-on-Insulator Ridge Waveguides 绝缘体上硅脊波导中的面外全内反射耦合镜
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708194
P. Cheben, B. Lamontagne, E. Post, S. Janz, D. Xu, A. Delâge
{"title":"Out-of-Plane Total Internal Reflection Coupling Mirrors in Silicon-on-Insulator Ridge Waveguides","authors":"P. Cheben, B. Lamontagne, E. Post, S. Janz, D. Xu, A. Delâge","doi":"10.1109/GROUP4.2006.1708194","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708194","url":null,"abstract":"We describe the fabrication and performance of out-of-plane coupling mirrors in silicon-on-insulator (SOI) ridge waveguides. The mirrors consisted of a 45deg facet formed using directional CAIBE etching through a lithographically defined window","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131216985","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Active Microring Resonator Devices in Silicon-on-Insulator 绝缘体上硅有源微环谐振器器件
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708150
R. Soref
{"title":"Active Microring Resonator Devices in Silicon-on-Insulator","authors":"R. Soref","doi":"10.1109/GROUP4.2006.1708150","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708150","url":null,"abstract":"Recent results from several laboratories are surveyed. The topics include SOI-based ultrafast electrooptical modulators, NtimesN routing switches, tunable filters-and-add/drops, Raman lasers and amplifiers, electrically pumped group IV lasers, optically pumped Er:SiO2-overclad slotted rings, and a variety of nonlinear optical devices","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134589007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Polarization State of Silicon Raman Lasers Dictated by Non-Degenerate Two-Photon Absorption 非简并双光子吸收对硅拉曼激光器偏振态的影响
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708164
E. Tien, O. Boyraz
{"title":"Polarization State of Silicon Raman Lasers Dictated by Non-Degenerate Two-Photon Absorption","authors":"E. Tien, O. Boyraz","doi":"10.1109/GROUP4.2006.1708164","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708164","url":null,"abstract":"In this paper, we demonstrate the polarization state of the silicon Raman lasers dictated by the non-degenerate two-photon absorption (TPA) process. We measure that the lasing in silicon waveguides can be achieved when pump and signal have linear and orthogonal polarization states relative to each other or circular polarization states. Pump-signal TPA increases the loss inside the resonator significantly and does not allow lasing when they have collinear polarization states. We measure the average lasing threshold power to be 12.5 mW for orthogonal polarization states and it is increased by 12% (to 14 mW) by adjusting the pump-signal polarization states to circular polarization. Experimental results reveal that the degenerate TPA will mitigate the higher order Raman lasing in silicon waveguides for wavelengths below 2 mum because of non-degenerate TPA process","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127576491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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