硅纳米晶嵌入SiO2基体中的光致发光机理

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708198

Xiaoxin Wang, B. Cheng, Jinzhong Yu, Qiming Wang

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引用次数: 0

摘要

研究了来自SRO材料体系的PL信号中量子约束效应引起的界面态复合效应。结果表明，Si nc尺寸越大，越有利于界面态重组过程超越量子约束过程，支持秦的模型

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Photoluminescence Mechanism of Si Nanocrystals Embedded in SiO2 Matrix

The interface state recombination effect from the quantum confinement effect in PL signals from the SRO material system was studied. The results show that the larger the size of Si NCs, the more beneficial for the interface state recombination process to surpass the quantum confinement process, in support of Qin's model

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3rd IEEE International Conference on Group IV Photonics, 2006.

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