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Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm 基于集成硅波导的1550nm终端检测结构
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708199
J. Doylend, P. Foster, J. Bradley, P. Jessop, A. Knights
{"title":"Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm","authors":"J. Doylend, P. Foster, J. Bradley, P. Jessop, A. Knights","doi":"10.1109/GROUP4.2006.1708199","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708199","url":null,"abstract":"We describe the fabrication of defect engineered waveguide detectors, and demonstrate that with optimal thermal treatment, detector dark current may be minimized to be a small fraction of the signal, even at a reverse bias of 5 V. A design for a terminal detector (as opposed to a signal monitor) is proposed which consists of a waveguide ring. Preliminary simulations suggest a significant increase in responsivity compared to straight waveguide detectors","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117281321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon Photonic Crystal Waveguide Modulators 硅光子晶体波导调制器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708159
L. Gu, Wei Jiang, Xiaonan Chen, R.T. Chen
{"title":"Silicon Photonic Crystal Waveguide Modulators","authors":"L. Gu, Wei Jiang, Xiaonan Chen, R.T. Chen","doi":"10.1109/GROUP4.2006.1708159","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708159","url":null,"abstract":"Ultra-compact silicon-photonic-crystal-waveguide-based thermo-optic and electro-optical Mach-Zehnder interferometers have been proposed and fabricated. Thermal and electrical simulations have been performed. Experimental results were in a good agreement with the theoretical prediction","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518618","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Low-Loss Amorphous Silicon Channel Waveguides for Integrated Photonics 集成光子学用低损耗非晶硅通道波导
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708231
D. Sparacin, R. Sun, Anant Agarwal, M. Beals, J. Michel, L. Kimerling, T. Conway, A. Pomerene, D. Carothers, M. Grove, D. Gill, M. Rasras, S. Patel, A. White
{"title":"Low-Loss Amorphous Silicon Channel Waveguides for Integrated Photonics","authors":"D. Sparacin, R. Sun, Anant Agarwal, M. Beals, J. Michel, L. Kimerling, T. Conway, A. Pomerene, D. Carothers, M. Grove, D. Gill, M. Rasras, S. Patel, A. White","doi":"10.1109/GROUP4.2006.1708231","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708231","url":null,"abstract":"Amorphous silicon (a-Si), single-mode, channel waveguides were fabricated and measured with transmission losses as low as 6.5 dB/cm for the TE mode and 4.5 dB/cm for the TM mode. Variations in the PECVD a-Si deposition conditions yielded a-Si materials with bulk losses <1 dB/cm","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127744425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 46
Label-Free Optical Biosensor using Silicon Two- Dimensional Photonic Crystal 硅二维光子晶体无标签光学生物传感器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708148
M. Lee, P. Fauchet
{"title":"Label-Free Optical Biosensor using Silicon Two- Dimensional Photonic Crystal","authors":"M. Lee, P. Fauchet","doi":"10.1109/GROUP4.2006.1708148","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708148","url":null,"abstract":"We report the design, fabrication and testing of a label-free optical biosensor consisting of a two-dimensional photonic crystal microcavity. The sensitivity of this device is better than 50 pg/mm2, with an extremely small internal surface of <100 mum2","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"216 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127744972","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Transmission Characteristics of Silicon One-Dimensional Photonic Crystals Embedded with Polymer 嵌入聚合物的硅一维光子晶体的透射特性
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708173
K. Hosomi, M. Tokushima, H. Yamada, S. Goto, T. Katsuyama, Y. Arakawa
{"title":"Transmission Characteristics of Silicon One-Dimensional Photonic Crystals Embedded with Polymer","authors":"K. Hosomi, M. Tokushima, H. Yamada, S. Goto, T. Katsuyama, Y. Arakawa","doi":"10.1109/GROUP4.2006.1708173","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708173","url":null,"abstract":"In this paper, we demonstrate the fundamental functionality of the tunable filter, which is composed of a 1D-PC microcavity embedded with a polymer. We qualitatively evaluated the resonant-peak shift caused by the thermo-optical (TO) effect. In this demonstration, the temperature of the sample was regulated with a thermo-electric module, which controls the temperature precisely. The aim of our qualitative study was to determine the relationship between the temperature and resonant wavelength","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124513744","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Directly Pumped Crystalline Silicon Laser - An Impossible Possibility? 直接泵浦晶体硅激光器-不可能的可能性?
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708217
J. Xu
{"title":"Directly Pumped Crystalline Silicon Laser - An Impossible Possibility?","authors":"J. Xu","doi":"10.1109/GROUP4.2006.1708217","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708217","url":null,"abstract":"Lasing at 1.28 mum was observed in a crystalline silicon structure under direct optical pumping, but is beyond the reach of optical lithography in feature size and beyond that of the e-beam lithography in field size. It is accomplished in this work through the use of a non-lithographic self-organized nanopore array membrane as an etch mask. The anodic aluminum oxide (AAO) nanopore etch mask was placed atop a thin SOI layer which was insulated from the thick silicon substrate by 3 mum of silicon-oxide. The nano patterning was achieved via reactive ion etching (RIE) which introduced nanopores to the silicon. The resultant silicon nanostructure consists of a periodic array of nanoscale high-density emissive structural deformation (ESD) zones","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116297417","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Integrated Reconfigurable Optical Add-Drop Multiplexer (R-OADM) based on Silicon Nano-Photonic Waveguides 基于硅纳米光子波导的集成可重构光加丢复用器(R-OADM)
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708233
T. Chu, Hirohito Yamada, A. Gomyo, J. Ushida, S. Ishida, Y. Arakawa
{"title":"Integrated Reconfigurable Optical Add-Drop Multiplexer (R-OADM) based on Silicon Nano-Photonic Waveguides","authors":"T. Chu, Hirohito Yamada, A. Gomyo, J. Ushida, S. Ishida, Y. Arakawa","doi":"10.1109/GROUP4.2006.1708233","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708233","url":null,"abstract":"Based on silicon 2D photonic crystals and photonic-wire waveguides, a compact reconfigurable optical add-drop multiplexer was demonstrated through thermo-optic effect. The 3-dB dropping bandwidth was 5 nm and the dropping extinction ratio was 40 dB","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"137 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115845290","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Beating the Heat: Controlling Thermal Effects in Plasma Dispersion Tuned SOI Waveguide Devices 加热:控制等离子体色散调谐SOI波导器件的热效应
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708232
P. Waldron, H. Panesar, N. G. Tarr, T. Smy, P. Jessop
{"title":"Beating the Heat: Controlling Thermal Effects in Plasma Dispersion Tuned SOI Waveguide Devices","authors":"P. Waldron, H. Panesar, N. G. Tarr, T. Smy, P. Jessop","doi":"10.1109/GROUP4.2006.1708232","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708232","url":null,"abstract":"Numerical solution of the semiconductor and heat flow equations is used to show that fast plasma dispersion tuning of bipolar SOI waveguide devices can be made to dominate over slower thermooptic tuning by using shallow, polysilicon-contacted n+ and p+ regions of minimum area, and placing these regions away from the waveguide rib. Experimental results for a plasma dispersion tuned Mach Zehnder interferometer switch are used to illustrate this design approach","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131636923","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit 在CMOS电路的金属化层中加入光子层
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708212
J. Fédéli, M. Migette, L. Cioccio, L. E. Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, L. Vivien
{"title":"Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit","authors":"J. Fédéli, M. Migette, L. Cioccio, L. E. Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, L. Vivien","doi":"10.1109/GROUP4.2006.1708212","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708212","url":null,"abstract":"The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"230 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115559242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Evanescent field sensor using silicon-on-insulator photonic wires 利用绝缘体上硅光子线的倏逝场传感器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708145
A. Densmore, D. Xu, P. Waldron, S. Janz, J. Lapointe, P. Cheben, A. Delâge, B. Lamontagne, J. Schmid, E. Post
{"title":"Evanescent field sensor using silicon-on-insulator photonic wires","authors":"A. Densmore, D. Xu, P. Waldron, S. Janz, J. Lapointe, P. Cheben, A. Delâge, B. Lamontagne, J. Schmid, E. Post","doi":"10.1109/GROUP4.2006.1708145","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708145","url":null,"abstract":"A silicon-on-insulator based evanescent field sensor using silicon photonic wire waveguides is reported. The unique properties of high index contrast, submicron structures are exploited to enhance electric field magnitude and localization near the sensor surface. The evanescent field sensor is demonstrated in a Mach Zehnder configuration.","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"94 4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114042577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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