Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit

J. Fédéli, M. Migette, L. Cioccio, L. E. Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, L. Vivien
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引用次数: 33

Abstract

The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels
在CMOS电路的金属化层中加入光子层
光子层在CMOS电路上的集成可以通过SOI光子电路的晶圆键合或在金属化水平上的光子层的低温制造来完成
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