J. Fédéli, M. Migette, L. Cioccio, L. E. Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, L. Vivien
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引用次数: 33
Abstract
The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels