基于集成硅波导的1550nm终端检测结构

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708199

J. Doylend, P. Foster, J. Bradley, P. Jessop, A. Knights

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引用次数: 2

摘要

我们描述了缺陷工程波导探测器的制造，并证明了通过最佳的热处理，即使在5 V的反向偏置下，探测器的暗电流也可以最小化到信号的一小部分。提出了一种由波导环组成的终端检测器(相对于信号监测器)的设计。初步模拟表明，与直波导探测器相比，响应率有显著提高

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Integrated Silicon Waveguide-based Structures for Terminal Detection of 1550nm

We describe the fabrication of defect engineered waveguide detectors, and demonstrate that with optimal thermal treatment, detector dark current may be minimized to be a small fraction of the signal, even at a reverse bias of 5 V. A design for a terminal detector (as opposed to a signal monitor) is proposed which consists of a waveguide ring. Preliminary simulations suggest a significant increase in responsivity compared to straight waveguide detectors

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3rd IEEE International Conference on Group IV Photonics, 2006.

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