在CMOS电路的金属化层中加入光子层

3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI:10.1109/GROUP4.2006.1708212

J. Fédéli, M. Migette, L. Cioccio, L. E. Melhaoui, R. Orobtchouk, C. Seassal, P. Rojo-Romeo, F. Mandorlo, D. Marris-Morini, L. Vivien

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引用次数: 33

摘要

光子层在CMOS电路上的集成可以通过SOI光子电路的晶圆键合或在金属化水平上的光子层的低温制造来完成

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Incorporation of a Photonic Layer at the Metallizations Levels of a CMOS Circuit

The integration of a photonic layer on a CMOS circuit can be done either by wafer bonding of an SOI photonic circuit or by low temperature fabrication of a photonic layer at the metallization levels

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3rd IEEE International Conference on Group IV Photonics, 2006.

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