3rd IEEE International Conference on Group IV Photonics, 2006.最新文献

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Broadband Optical Amplification and Wavelength Conversion by Four-Wave Mixing in Silicon Waveguides 硅波导中四波混频的宽带光放大和波长转换
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-09 DOI: 10.1109/GROUP4.2006.1708196
Jidong Zhang, Q. Lin, G. Agrawal, P. Fauchet
{"title":"Broadband Optical Amplification and Wavelength Conversion by Four-Wave Mixing in Silicon Waveguides","authors":"Jidong Zhang, Q. Lin, G. Agrawal, P. Fauchet","doi":"10.1109/GROUP4.2006.1708196","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708196","url":null,"abstract":"We show that ultrabroadband parametric generation and wavelength conversion can be realized in SOI waveguides in the wavelength region near 1550 nm by tailoring their zero-dispersion wavelength and launching the pump wave close to this wavelength","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"141 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121605517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Focused-Ion-Beam Fabricated Vertical Fiber Couplers on Silicon-on-Insulator Waveguides 聚焦离子束在绝缘体上硅波导上制造垂直光纤耦合器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-02 DOI: 10.1109/GROUP4.2006.1708179
J. Schrauwen, D. van Thourhout, R. Baets
{"title":"Focused-Ion-Beam Fabricated Vertical Fiber Couplers on Silicon-on-Insulator Waveguides","authors":"J. Schrauwen, D. van Thourhout, R. Baets","doi":"10.1109/GROUP4.2006.1708179","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708179","url":null,"abstract":"We fabricated grating couplers in silicon-on-insulator waveguides with focused-ion-beam. First devices were very lossy, but by using selective etchant and a hard mask we obtained efficiencies comparable to traditional fabrication techniques","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124846759","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Compact Electro-Optic Modulator on Silicon-on-Insulator Substrates using Cavities with Ultra-Small Modal Volumes 使用超小模态体积腔体的绝缘体上硅衬底紧凑型电光调制器
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-10-01 DOI: 10.1109/LEOS.2006.279101
B. Schmidt, Q. Xu, J. Shakya, M. Lipson
{"title":"Compact Electro-Optic Modulator on Silicon-on-Insulator Substrates using Cavities with Ultra-Small Modal Volumes","authors":"B. Schmidt, Q. Xu, J. Shakya, M. Lipson","doi":"10.1109/LEOS.2006.279101","DOIUrl":"https://doi.org/10.1109/LEOS.2006.279101","url":null,"abstract":"We experimentally demonstrate an electro-optic modulator using a high-index-contrast silicon Fabry-Perot resonator. This compact high-speed device is a 1-D integrated cavity, only 4.5 lambda/n in length with an embedded p-i-n junction on a silicon-on-insulator platform","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128827894","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 132
Nonlinear absorption in silicon at mid infrared wavelengths 中红外波段硅的非线性吸收
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-09-13 DOI: 10.1109/GROUP4.2006.1708195
V. Raghunathan, R. Shori, O. Stafsudd, B. Jalali
{"title":"Nonlinear absorption in silicon at mid infrared wavelengths","authors":"V. Raghunathan, R. Shori, O. Stafsudd, B. Jalali","doi":"10.1109/GROUP4.2006.1708195","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708195","url":null,"abstract":"We report measurements of nonlinear absorption in mid-IR wavelengths. The absence of nonlinear losses beyond the two-photon bandedge combined with high Raman gain, thermal conductivity and damage threshold renders silicon an excellent mid-IR Raman crystal.","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128313908","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Energy harvesting in silicon Raman amplifiers 硅拉曼放大器的能量收集
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 2006-08-08 DOI: 10.1063/1.2335625
K. Tsia, S. Fathpour, B. Jalali
{"title":"Energy harvesting in silicon Raman amplifiers","authors":"K. Tsia, S. Fathpour, B. Jalali","doi":"10.1063/1.2335625","DOIUrl":"https://doi.org/10.1063/1.2335625","url":null,"abstract":"A method to recover power lost to two photon absorption is described. Approach is applicable to both Raman and Kerr based devices. CW Raman amplification with negative electrical power dissipation is experimentally demonstrated in silicon","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2006-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132114254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 44
SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED SiOx/Si界面Si纳米金字塔增强富硅SiOx MOSLED的电致发光
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 1900-01-01 DOI: 10.1109/GROUP4.2006.1708181
Gong-Ru Lin, Chi-Kuan Lin
{"title":"SiOx/Si Interfacial Si Nano-Pyramids Enhancd Electroluminescence from Si-Rich SiOx MOSLED","authors":"Gong-Ru Lin, Chi-Kuan Lin","doi":"10.1109/GROUP4.2006.1708181","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708181","url":null,"abstract":"Interfacial (100)-oriented Si nanopyramids are synthesized with surface density of 10<sup>9</sup> cm<sup>-2</sup> prior to the growth of Si-rich SiO<sub>x</sub>, which greatly suppresses blue-green EL and improve near-infrared EL at 30 nW with lifetime of >10 hrs","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122363047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface Plasmon Interferometer in Silicon-on-Insulator: Novel Concept for an Integrated Biosensor 绝缘体上硅表面等离子体干涉仪:集成生物传感器的新概念
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 1900-01-01 DOI: 10.1109/GROUP4.2006.1708147
P. Debackere, S. Scheerlinck, P. Bienstman, R. Baets
{"title":"Surface Plasmon Interferometer in Silicon-on-Insulator: Novel Concept for an Integrated Biosensor","authors":"P. Debackere, S. Scheerlinck, P. Bienstman, R. Baets","doi":"10.1109/GROUP4.2006.1708147","DOIUrl":"https://doi.org/10.1109/GROUP4.2006.1708147","url":null,"abstract":"We propose a novel configuration for a highly integrated and highly sensitive optical biosensor. The basic element of our sensor is a surface plasmon interferometer consisting of a thin layer of gold embedded in a silicon membrane. We investigate the performance of our sensor by simulation using eigenmode expansion. We calculate that refractive index changes in the order of 10-6 RIU (refractive index unit) are detectable for a component of length 10 mum. Moreover, we illustrate that the operation wavelength of our sensor can be tuned to a desired wavelength for a wide range of environmental refractive indices, making our device suitable for chemo- and biosensing","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116527701","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 63
Silicon photodiodes 硅光敏二极管
3rd IEEE International Conference on Group IV Photonics, 2006. Pub Date : 1900-01-01 DOI: 10.1109/group4.2006.1708204
K. Ohashi, J. Fujikata, T. Ishi, K. Nishi, M. Mizuno, K. Nose, K. Ishihara, T. Baba
{"title":"Silicon photodiodes","authors":"K. Ohashi, J. Fujikata, T. Ishi, K. Nishi, M. Mizuno, K. Nose, K. Ishihara, T. Baba","doi":"10.1109/group4.2006.1708204","DOIUrl":"https://doi.org/10.1109/group4.2006.1708204","url":null,"abstract":"A high-speed Si nano-photodiode with a surface plasmon antenna has been developed. The optical near-field technology used in this device will increase the feasibility of on-chip optical data transmission and optical clock distribution in LSIs","PeriodicalId":342599,"journal":{"name":"3rd IEEE International Conference on Group IV Photonics, 2006.","volume":"130 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124021889","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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